Patents Assigned to NIPPON STEEL & SUMITOMO METAL CORPORATIN
  • SiC single crystal ingot and production method therefor
    Patent number: 9523156
    Abstract: Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: December 20, 2016
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, NIPPON STEEL & SUMITOMO METAL CORPORATIN
    Inventors: Motohisa Kado, Hironori Daikoku, Hidemitsu Sakamoto, Kazuhiko Kusunoki, Nobuhiro Okada