Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.

Abstract: An ion source includes a vaporizer, an arc chamber, and a heat shield. The vaporizer includes a crucible containing an aluminum-containing material and a heater that heats the crucible. The crucible has a gas inlet and a vapor outlet. The arc chamber generates a plasma inside of the arc chamber. The vapor outlet outputs vapor into the arc chamber through a wall of the arc chamber, and the heat shield is provided between the vaporizer and the wall of the arc chamber.

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

Abstract: An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.

Abstract: An ion beam irradiation apparatus includes a plasma generation container in which plasma is generated, a vaporizer connected to the plasma generation container, a halogen gas supply passage through which a halogen gas is supplied to the vaporizer, an air supply passage through which air is supplied to the vaporizer, and an evacuation passage through which a reaction product produced through a reaction between the halogen gas and the air is evacuated to an outside of the ion beam irradiation apparatus.

Abstract: A vaporizer includes a crucible in which an aluminum-containing solid material is placed, and a heater. The crucible includes a chlorine containing gas inlet and a vapor outlet. The heater heats the crucible.

Abstract: A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.

Abstract: An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Abstract: A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

Abstract: A heating device is provided. The heating device includes a conveyance member, first and second support members, and a heat reflecting plate. The first support member is provided on the conveyance member and supports a substrate during movement of the conveyance member. The second support member includes a heater and supports the substrate during processing of the substrate. The heat reflecting plate travels with the conveyance member and reflects heat from the heater toward the substrate.

Abstract: A hydrogen supply device disposed in a high-potential section includes a bottle internally provided with a hydrogen absorbing alloy.

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

Abstract: A wafer separating apparatus and method are provided. The apparatus includes an electrostatic chuck, a separation structure and a control device. The electrostatic chuck electrostatically supports a wafer during wafer processing using a voltage having a polarity. The separation structure mechanically separate the wafer from the electrostatic chuck. The control device controls the electrostatic chuck to, after the wafer processing is completed, reduce a magnitude of the voltage with the polarity while the separation structure applies a force to the wafer to separate the wafer from the electrostatic chuck.

Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam meeting a processing condition, and a machine learning part that generates a learning algorithm using, as an explanatory variable, a processing condition during new processing and a monitored value that indicates a state of a module during a last processing immediately before the new processing, and a basic operation parameter output part that uses the learning algorithm to output an initial value of a basic operation parameter for controlling an operation of the module.

Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.

Abstract: An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Abstract: Provided is a mass separator (100) for performing mass separation for an ion beam (IB). The mass separator (100) includes a transfer structure (30) that is a component of a yoke (13) and move at least one of an upper yoke (13a) positioned over the beam path (L), a lower yoke (13b) positioned under the beam path (L), and a side yoke (13c, 13d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.

Abstract: A wafer separating apparatus and method are provided. The apparatus includes an electrostatic chuck, a separation structure and a control device. The electrostatic chuck electrostatically supports a wafer during wafer processing using a voltage having a polarity. The separation structure mechanically separate the wafer from the electrostatic chuck. The control device controls the electrostatic chuck to, after the wafer processing is completed, reduce a magnitude of the voltage with the polarity while the separation structure applies a force to the wafer to separate the wafer from the electrostatic chuck.

Abstract: A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.