Abstract: A constant current power supply circuit for an integrated circuit memory which is well suited for driving a high capacitance load, such as a large number of sense amplifiers. A first circuit provides a constant current source and a second "current mirror" circuit provides an output current proportionate to the first circuit, but at a higher desired level of current. The constant current circuit is achieved using two cross-coupled FET transistors and two resistances such that the conductivity of each transistor is inversely related to the conductivity of the other. The circuit reaches a constant current equilibrium which is largely independent of operating voltage or load, but rather depends on the relative values of the components.

Abstract: A voltage reference generated for an integrated circuit which produces a source of reference voltage which is self-compensated for variations in operating voltage (V.sub.cc) or in transistor threshold voltages (V.sub.T). The circuit uses a voltage divider coupled between V.sub.cc and ground and has first and second FET transistors. A faced control circuit is coupled to control the conductivity of the first transistor, and the second control circuit is coupled to control the conductivity of the second transistor. The first control circuit produces a control voltage which varies as a function of variations in V.sub.cc, while the second control circuit also provides a control voltage wherein variations are a function of variations in V.sub.cc, but in an opposite direction. Hence, the second control voltage is configured so that variations in V.sub.cc cause the second transistor to compensate for changes in operation of the first transistor, so that the reference voltage remains substantially constant.

Abstract: A semiconductor integrated circuit device having a protective film made of a polymer having a fluorine-containing aliphatic cyclic structure.