Abstract: A processing device includes an imitation multiport memory circuit (10) interconnecting inputs and outputs of a group of functional units (F1, . . . FN), all operating under control of a single series of very long program instructions. The memory circuit (10) comprises a plurality of separate memory units (15), each having a read port (12) connected to a respective functional unit input, and a crossbar switching circuit (18) connected between the functional unit outputs and write ports of the separate memory units. The memory circuit (10) provides substantially the same performance as a true multiport memory but requires a smaller circuit area, allowing a larger processing device to be integrated in one chip than previously. Collisions for access to a memory unit write port can be resolved without rescheduling by use of a delay element (21,70) and/or an additional write port (82) to a memory unit.

Abstract: Electrical connections to specified semiconductor or electrically conductive portions (18, 26, and 30) of a structure created from a semiconductive body (10) are created by a process in which a titanium contact layer (34) is deposited on the structure over the specified portions. An electrically conductive barrier material layer (36) which consists principally of non-titanium refractory material is formed over the contact layer. The resulting structure is then annealed at a temperature above 550.degree. C. in order to lower the contact resistance. The anneal is preferably done at 600.degree. C. or more for 10-120 seconds in a gas whose principal constituent is nitrogen. An electrically conductive primary interconnect layer is formed over the barrier material layer after which all three layers are patterned to create a composite interconnect layer.

Abstract: An integrated circuit (10, 22) contains an active bypass (36) that inhibits high-frequency supply-voltage variations caused by interaction of the circuitry elements (28) with the parasitic inductances (L.sub.HE, L.sub.HP, L.sub.LP, and L.sub.LE) associated with the power supply lines (16.sub.H /24.sub.H /26.sub.H /32.sub.H and 16.sub.L /24.sub.L /26.sub.L /32.sub.L) for the circuit. The bypass centers around a transistor (Q.sub.BP) coupled between the supply lines. An activation circuit (38) provides the transistor with a control signal (V.sub.C) to activate the transistor. A sensing capacitor (C.sub.S) provides a capacitive action between the transistor control electrode and one of the supply lines.