Abstract: The process of the present invention is based on a hexagonal cellular platform where six, or a multiple of six, frequency groups are directionalized and reused in the same direction. Directional antennas are located in the center of each cell. Each antenna radiates into a 60.degree. sector of the cell. The reused frequency groups are aligned along the 0.degree., 120.degree., and 240.degree. axes of each cell. Each axis has three layers, the two outer layers having an identical frequency reuse series. The frequency groups are reused in the same direction along each axis, reducing the number of dominant interfering cells to one.

Abstract: Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based on Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.

Abstract: Path protection is provided in a transmission equipment or node of a synchronous network in which traffic is carried in virtual containers within frames. Path protection is provided between first and second ingress points and an egress point by embedding an encoded measure of the respective path quality within a pointer associated with each frame. This measure temporarily replaces a set of pointer bits which are subsequently regenerated. At the egress point the quality measures of the two paths are compared and the higher quality path is selected.