Abstract: A transport method for disk-shaped semiconductor wafer workpieces has a horizontally movable transport arm with two elongated carrying elements at one end, for receiving the workpiece. A cassette which includes a comb structure at each side for receiving several workpieces, is inserted free of contact between two adjacent combs with workpieces therein for vertically lifting a workpiece. The carrying elements are disposed such that during a cassette engagement they are each positioned substantially adjacent and parallel to the comb structure along a comb, and in this region along and between two adjacent comb planes on one side of the cassette, a scanning beam is provided for workpiece acquisition. The scanning beam is relatively height-positionable with respect to the cassette and is tilted about a small angle with respect to the horizontal workpiece plane.

Abstract: A transport method for disk-shaped semiconductor wafer workpieces has a horizontally movable transport arm with two elongated carrying elements at one end, for receiving the workpiece. A cassette which includes a comb structure at each side for receiving several workpieces, is inserted free of contact between two adjacent combs with workpieces therein for vertically lifting a workpiece. The carrying elements are disposed such that during a cassette engagement they are each positioned substantially adjacent and parallel to the comb structure along a comb, and in this region along and between two adjacent comb planes on one side of the cassette, a scanning beam is provided for workpiece acquisition. The scanning beam is relatively height-positionable with respect to the cassette and is tilted about a small angle with respect to the horizontal workpiece plane.

Abstract: The invention describes a device and a process that render possible the production of a layer system for wear protection, corrosion protection and improvement of the slipping properties and the like with an adhesion layer to be arranged on a substrate, a transition layer to be arranged on the adhesion layer and a covering layer of diamond-like carbon, wherein the adhesion layer comprises at least one element of the group of elements that contains the elements of the fourth, fifth and sixth subgroup of the periodic table and silicon, the transition layer comprises carbon and at least one element of the aforesaid groups and covering layer consists essentially of diamond-like carbon, the layer system having a hardness of at least 15 GPa, preferably at least 20 GPa, and an adhesion of at least 3 HF according to VDI 382l, Sheet 4.