Abstract: Disclosed is a method for separating a plate into multiple individual detached components or cutting the plate into chips. The back end process for a plate includes providing a substrate; attaching the plate to the substrate using a sacrificial layer that is made of materials that in a solid state at ambient temperature and ambient pressure, and having a transformation temperature into one or more gaseous compounds at ambient pressure of between 80° C. and 600° C.; and separating the plate attached on the substrate into a plurality of plate portions; increasing temperature and/or reducing surrounding pressure to transform the sacrificial layer into one or more gaseous compounds.

Abstract: A process for fabricating a heterojunction field-effect transistor including a semiconductor structure made up of superposed layers, including: providing on a substrate layer (1) a buffer layer (2), a channel layer (3) and a barrier layer (4), the layers being made of materials having hexagonal crystal structures of the Ga(1-p-q)Al(p)In(q)N type; forming an opening in a dielectric masking layer (5) deposited on the barrier layer; growing by high-temperature epitaxy a semiconductor material (6, 6?) having a hexagonal crystal structure, namely Ga(1-x?-y?)Al(x?)In(y?)N, doped with germanium, on a growth zone defined by the opening formed in the masking layer; and depositing a source or drain contact electrode (15, 16) on the material thus deposited by epitaxy, and a gate electrode (13) in a location outside of the growth zone.

Abstract: The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BwAlxGayInzN, growth of a layer of BwAlxGayInzN, (c3) growth of an intermediate layer of BwAlxGayInzN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.

Abstract: The present invention is based on a hand-held power tool with a housing (12), an oscillating body (18) provided for oscillation relative to the housing (12), and connecting means (22) which fasten the oscillating body (18) to the housing (12). It is provided that the connecting means (22) include a receiving part (26) which can be installed in the housing (12) and an oscillating element (28) which is separate from the receiving part (26) and is provided for deformation.