Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.

Abstract: Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.

Abstract: A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.

Abstract: A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.

Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

Abstract: The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.

Abstract: A high efficiency luminous device and a manufacturing method thereof are disclosed. The high efficiency luminous device includes a LED structure, a first metal electrode, and a second metal electrode. The LED structure is for emitting light. The first metal electrode is formed on the LED structure, and the first metal electrode has a plurality of first openings therein. The second metal electrode is formed on the LED structure, and the second metal electrode has a plurality of second openings therein. The plurality of first openings and the plurality of second openings allow the light emitted from the LED structure to pass therethrough.

Abstract: A method for fabricating a high efficiency lighting device and the structure thereof are disclosed. The method includes the following steps: providing a light emitting diode structure; attaching a distributed-Bragg reflecting layer (DBR) to the light emitting diode structure by vapor deposition; and connecting the light emitting diode structure to a eutectic layer through the distributed-Bragg reflecting layer to form the high efficiency lighting device.

Abstract: The invention provides a substrate for fabricating a light emitting device and the light emitting device fabricated therefrom. The substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of continuous protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein the first facet direction is substantially excluded from facet directions of the plurality of continuous protruded portions. Since facet directions of the plurality of continuous protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.

Abstract: A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.

Abstract: A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.

Abstract: A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.

Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

Abstract: A light emitting diode includes: an epitaxial substrate having a roughened side and formed with alternately disposed ridges and valleys at the roughened side, each of the ridges having a roughened surface that is formed with a dense concentration of alternately disposed pits and protrusions; and an epitaxial layered structure formed on and covering the ridges and the valleys of the epitaxial substrate. A method for making the light emitting diode involves forming the epitaxial substrate with the ridges and valleys prior to the formation of the epitaxial layered structure.

Abstract: A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.

Abstract: A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.

Abstract: A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.

Abstract: The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.

Abstract: An optical data storage system includes a laser which is focused on an optical disk by an objective lens. A tracking actuator and a focus actuator move the objective lens about a tracking axis and focus axis respectively. The tracking and focus actuators respond to signals provided by a focus and tracking detector. The focus and tracking detector is formed by four photodetectors which are electrically isolated from one another. The third and fourth photodetectors are disposed about the outer peripheries of the first and second photodetectors, respectively, about an axis. Each photodetector emits an electrical signal representative of the radiation detected thereon.

Abstract: A file management system for interfacing a host computer application or operating system to a write once read mostly optical data storage system. The file management system causes a predetermined number of sectors on the optical disk to be reserved for a directory region, and causes files of information data to be written to consecutive sectors of an information region adjacent the directory region. Directory data associated with the files of information data is then written to consecutive sectors in the directory region. The information region is thereby allowed to expand to any necessary size until directory data associated therewith fills the adjacent directory region. These procedures are then repeated, resulting in a plurality of interleaved directory and information regions on the optical disk. The file management system causes directory data to be organized in a tree structure. Each file of information data is associated with a subdirectory.