Abstract: A controller of a cell phone serving as the position detector reads time-sequentially anteroposterior positional information Pi?1, Pi+1, together with interest positional information Pi that is an object of determination (S103), and calculates, for example, vectors V1 and V2 showing a shift from Pi?1, to Pi and a shift from Pi to Pi+1, respectively (S104, S105), in order to calculate an amplitude of fluctuation representing a direction of change. The amplitude of fluctuation representing a direction of change is expressed by a value of dot product of the calculated vectors V1 and V2 (S106). When the value of dot product is lower than a predetermined value (S107: YES), a position is shown to greatly deviate in the vicinity of the interest positional information Pi. Therefore, the amplitude of fluctuation representing a direction of change is judged to be large, and the positional information is determined to be error (S108).

Abstract: A controller of a cell phone serving as the position detector reads time-sequentially anteroposterior positional information Pi?1, Pi+1, together with interest positional information Pi that is an object of determination (S103), and calculates, for example, vectors V1 and V2 showing a shift from Pi?1, to Pi and a shift from Pi to Pi+1, respectively (S104, S105), in order to calculate an amplitude of fluctuation representing a direction of change. The amplitude of fluctuation representing a direction of change is expressed by a value of dot product of the calculated vectors V1 and V2 (S106). When the value of dot product is lower than a predetermined value (S107: YES), a position is shown to greatly deviate in the vicinity of the interest positional information Pi. Therefore, the amplitude of fluctuation representing a direction of change is judged to be large, and the positional information is determined to be error (S108).

Abstract: There is provided a nonvolatile memory including memory cells each of which includes a storage element including a bistable molecular layer, wherein the bistable molecular layer contains a bistable molecule which brings about isomerization from a first isomer into a second isomer by injecting a hole and an electron into the bistable molecular layer, and brings about isomerization from the second isomer into the first isomer by irradiating the bistable molecular layer with erase light, and the memory is configured to irradiate the bistable molecular layers of all the memory cells with the erase light while applying an electric field to the bistable molecular layer of only a part of the memory cells that stores information to be held when erasing information stored in the rest of the memory cells.