Abstract: The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be—Se configuration.
Type:
Grant
Filed:
January 10, 2000
Date of Patent:
April 16, 2002
Assignee:
Osram Opto Semiconductors & Co. OHG
Inventors:
Frank Fischer, Andreas Waag, Thierry Baron, Gottfried Landwehr, Thomas Litz, Günter Reuscher, Markus Keim, Ulrich Zehnder, Hans-Peter Steinbrück, Mario Nagelstrasser, Hans-Jürgen Lugauer