Abstract: A signal generating system comprises a signal generator (14) for generating an electrical signal at a predetermined frequency; an impedance matching circuit (16), the electrical signal being supplied from the signal generator (14) via the impedance matching circuit (16) to a reactive load (10) in use; and an impedance matching control system (30) for detecting the electrical signal between the signal generator and the reactive load and for adjusting the impedance matching circuit (16) to achieve a predetermined condition. The impedance matching circuit control system (30) comprises a heterodyne circuit, and the system further comprises a heterodyne frequency generator (48) coupled to the signal generator (14) to generate a second, hetero-dyne frequency from the predetermined frequency from the signal generator. This second, heterodyne frequency is mixed with the detected signal to generate sum and difference signals.

Abstract: A method is provided of generating and using a control program for a obtain plasma process. The method comprises obtaining predetermined process data defining, in a series of time steps, changes in at least one control parameter for the plasma process during the said process. Control data are generated from the process data, the control data defining the at least one control parameter at a plurality of discrete times within each step. The control data are presented graphically to a user, using an interactive display device. The control data are modified in response to the operation by the user of the interactive display device, so as to generate the control program.

Abstract: Apparatus is provided for plasma treating a substrate. This has a chamber (2) and a plasma generator (4) which forms a plasma from one or more gases flowing within the chamber so as to produce one or more species for interacting with a substrate (8) placed within the chamber. A guide (12) is provided for directing the gas flow containing the species towards the substrate (8). When in use, the width of the plasma is greater than that of the substrate by an amount defining an outer region of plasma. The guide is adapted to direct the species from at least substantially all of the outer region of the plasma towards the substrate. A corresponding method of plasma treatment is also disclosed.

Abstract: A gas port assembly is provided for supplying or removing one or more gases to a powered electrode in a plasma processing chamber. The chamber has at least one electrode (11) to which an alternating electrical potential is applied in use, the assembly being electrically insulated from the electrode(s). The assembly comprises, a number of dielectric members (15) and a number of electrically conductive members (16). The members are arranged in a stack of alternating dielectric and electrically conductive members. Each member comprises at least one gas pathway for the passage of the gas(es), such that when stacked, the gas pathways are in communication with each other and the gas(es) are able to pass between an outer side of the stack and a chamber side of the stack. The members act as a capacitive divider to reduce high voltages within the assembly.

Abstract: Plasma processing apparatus is provided having a chamber (1), first (3) and second (8) electrodes, and power supply (10) to generate the plasma. The first electrode (3) is formed from a nickel alloy having substantially planar upper (16) and lower (17) surfaces. A heater (4) heats at least the first electrode (3) to a processing temperature. The heater (4) comprises one or more heating members (15) arranged in a substantially planar manner, the heater (4) and first electrode (3) forming an assembly such that the parts of the one or more heating members (15) that are closest to an upper surface (16) of the first electrode (3), define a first plane (18) that is separated from the upper surface (16) by a distance Y, the parts of the one or more heating members (15) that are furthest from the upper surface (16) of the first electrode (3), define a second plane (19), where in the separation of the first (18) and second (19) planes defines a heater thickness X and wherein Y lies in the range 1.2X to 3X.

Abstract: Apparatus is provided for plasma treating a substrate. This has a chamber (2) and a plasma generator (4) which forms a plasma from one or more gases flowing within the chamber so as to produce one or more species for interacting with a substrate (8) placed within the chamber. A guide (12) is provided for directing the gas flow containing the species towards the substrate (8). When in use, the width of the plasma is greater than that of the substrate by an amount defining an outer region of plasma. The guide is adapted to direct the species from at least substantially all of the outer region of the plasma towards the substrate. A corresponding method of plasma treatment is also disclosed.

Abstract: The present invention provides apparatus for loading a substrate (65) onto a processing surface (61) in a thin-film processing chamber (60). The apparatus includes a support (66) which cooperates with one or more corresponding apertures (62) in the processing surface so as to be movable between an extended position in which the support can support a substrate (65) above the processing surface (61), and a retracted position in which the support is flush with or located below the processing surface (61). The support has a number of limbs (64) which extend radially outwardly from a central hub, at an angle relative to the processing surface. The limbs contact the edges of different sized substrates in use so as to support the substrate in a support plane above the central hub and substantially parallel to the processing surface.