Abstract: An interconnect structure is provided by applying a conductive layer (typically one or more metal layers 23,28) over the entire surface of the module (11) to form all of the contacts (19,32) to all of the cells in the module and then scribing the conductive layer into a series of strips using a series of straight high speed laser scribes. The strips are then divided into individual links by scribing transversely to the first scribe direction with the laser turned on and off to cut each alternate stripe. The p-type regions of the cells are contacted through holes (19), n-type regions are contacted through holes (32). A silicon film (12) is separated into cells (35a,b,c,d) by isolation grooves (16). In a first embodiment, every second transverse scribe is offset by one strip such that each strip is cut into links which overlap two links on either side that are offset by a distance equal to half the pitch of the links.

Abstract: A method of texturing a substrate or superstrate support material is provided, in which a thin textured film (32) is applied to the surface of the support material such as glass sheet (11). The dipping process is performed by loading a sheet (50) of the support material (11) into a frame (51) which provides a small number of small area contact points (52, 53) at which the sheet (50) is supported and lowering the frame (51) into texturing solution (59) comprising a mixture (59) of Sol-Gel (61) and texturing particles (62) comprising SiO2 monospheres. The sheet is then withdrawn from the texturing solution and the resultant film allowed to dry. The film is then sintered and the resulting film provides a textured surface suitable for the formation of a photovoltaic device.

Abstract: A method of communicating over a power line is disclosed, the method comprising the step of modulating a current component of an AC power signal present on the power line. Also disclosed is a communications protocol for communication between a monitoring unit and an appliance, the protocol having two modes of operation, the first mode being an on-line single direction protocol for communications from the appliance to the monitoring unit via modulation of a current component of an AC power signal between the monitoring unit and the appliance, and the second mode being an off-line protocol for communications at least from the monitoring unit to the appliance, the second mode being operable only when the power signal is not present between the monitoring unit and the appliance.

Abstract: A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C.

Abstract: A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a connection through the p layer 13 to the underlying n++ layer 12, a column of semi-conductor material is heated, the column passing through the various doped layers and the material in the column being heated or melted to allow migration of dopant between layer of the device in the region of the column.

Abstract: A simple thin film structure is illustrated in which a substrate (11), which may be glass or any other suitable substrate material, supports a device structure (12), over which is formed an inert dielectric layer (13) and a metal film (14). A pulsed laser beam (15) directed at the surface of the metal film layer (14). When the laser is pulsed on, a small amount of metal is ablated directly under the beam and surface tension in the surface of molten metal surrounding the ablated region pulls the metal back from the hole causing a slight thickening of the metal (17) around the hole, and creates a hole (16) which is significantly larger in diameter than the ablated region.

Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A thin film silicon solar cell is provided on a glass substrate, is illustrated, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm ±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A multilayer solar cell structure includes a stack of alternating p-type and n-type semiconductor layers arranged to form a plurality of rectifying photovoltaic junctions. Low-cost cells are manufactured from low-quality material which is optimized by employing very high doping levels in thin layers. Typically, the doping levels are greater than 10.sup.17 atoms/cm.sup.3, and the thickness of the layers is related to carrier diffusion length in thickness. Contact is made to underlying layers by way of a buried contact structure comprising grooves extending down through all of the active layers, the walls of each groove being doped with n- or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled or partly filled with metal contact material.