Abstract: The present invention is an antibody including an amino acid sequence, wherein the amino acid sequence includes, in an N- to C-direction, the following structural domains: N-FR1-CDR1-FR2-CDR2-FR3-CDR3-FR4-C wherein FR denotes a framework region amino acid sequence and CDR denotes a complementary determining region amino acid sequence; the CDR1 includes an amino acid sequence represented by SEQ ID NO: 1; the CDR2 includes an amino acid sequence represented by SEQ ID NO: 2; and the CDR3 includes an amino acid sequence represented by SEQ ID NO: 3. The antibody is capable of binding to an intranuclear protein of an influenza virus.

Abstract: To avoid occurrence of communication conflict at the transmission time of re-transmission data without losing real-time performance of data transmission with respect to data missing during communication, thereby enabling excellent data transmission a reception controller allocates time slots for transmission of second data (re-transmission) transmitted from transmitters on the basis of a re-transmission request message according to a reception condition of first data (latest data) and the reception controller transmits an acknowledgement message (ACK) for the first data with a slot time being embedded in an acknowledgement message for every reception-success transmitter.

Abstract: A strobe device according to the present invention includes: a strobe main body; a light-emitting unit rotatably connected to the strobe main body; a variable mechanism capable of changing an angle of the light-emitting unit; a drive unit for driving the variable mechanism; and a control unit for controlling the drive unit, wherein the control unit has a mode of changing an illumination direction angle of the light-emitting unit at each shot in a continuous shooting operation. This realizes a strobe device that makes it possible to immediately obtain a favorite image.

Abstract: A cross point nonvolatile memory device capable of suppressing sneak-current-caused reduction in sensitivity of detection of a resistance value of a memory element is provided. The device includes perpendicular bit and word lines; a cross-point cell array including memory cells each having a resistance value reversibly changing between at least two resistance states according to electrical signals, arranged on cross-points of the word and bit lines; an offset detection cell array including an offset detection cell having a resistance higher than that of the memory cell in a high resistance state, the word lines being shared by the offset detection cell array; a read circuit (a sense amplifier) that determines a resistance state of a selected memory cell based on a current through the selected bit line; and a current source which supplies current to the offset detection cell array in a read operation period.