Abstract: The present invention provides transceiver modules in which a transceiver may be ejected from a cage into which the transceiver is inserted by pivoting a handle mounted on the transceiver.

Abstract: A method for fabricating an improved aperture is provided in which an oxidizable layer is deposited on a substrate, a mask is deposited in a first region over the oxidizable layer to leave a second region exposed, the oxidizable layer in the second region is removed, additional non-oxidizable material is deposited over the second region, a side wall of the oxidizable region is exposed, and the oxidizable layers is oxidized to form an oxidized region in at least a portion of the first region.

Abstract: An improved connector is provided. The connector comprises: an optoelectronic transducer having a transducer axis through a center of the optoelectronic transducer, and a first alignment means integrated with the optoelectronic transducer; an optical fiber having a fiber axis being different than the transducer axis; a first lens comprising a ball lens disposed between the optoelectronic transducer and the optical fiber, a center of the first lens aligned to the optoelectronic transducer axis by the first alignment means; and a second lens between the optical fiber and the first lens, a center of the second lens aligned to the fiber axis by a second alignment means; wherein the first and second lenses form an optical relay which relays light between the center of the optoelectronic transducer and the center of the optical fiber, forming an efficient optical coupling between the optoelectronic transducer and the optical fiber, even though the transducer axis and the fiber axis do not coincide.

Abstract: A method for fabricating a semiconductor device is provided in which a first layer having a first conductivity type is grown, a current aperture region comprising at least one layer of an oxidizable material is grown, a second layer is grown, an impurity material is diffused through a first region of the layer of oxidizable material to decrease the susceptibility to oxidation in the first region and to provide a conductive channel through the layer of oxidizable material, the semiconductor device is etched to expose a sidewall of the oxidizable layer, and the oxidizable layer is oxidized in a region outside of the first region to form an oxidized region while leaving at least a portion of the first region non-oxidized to form a current aperture in the oxidizable layer.