Patents Assigned to PKL Co., Ltd.
  • Method for cleaning a photomask
    Patent number: 7377984
    Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: May 27, 2008
    Assignee: PKL Co., Ltd.
    Inventors: Yong Dae Kim, Jong Min Kim, Han Byul Kang, Hyun Joon Cho, Sang Soo Choi
  • METHOD FOR CLEANING A PHOTMASK
    Publication number: 20070215181
    Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
    Type: Application
    Filed: January 18, 2007
    Publication date: September 20, 2007
    Applicant: PKL CO., LTD.
    Inventors: Yong Dae KIM, Jong Min KIM, Han Byul KANG, Hyun Joon CHO, Sang Soo CHOI
  • DEVICE FOR CLEANING A PHOTOMASK
    Publication number: 20070215188
    Abstract: Disclosed herein is a device for cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
    Type: Application
    Filed: January 18, 2007
    Publication date: September 20, 2007
    Applicant: PKL CO., LTD.
    Inventors: Yong Dae KIM, Jong Min KIM, Han Byul KANG, Hyun Joon CHO, Sang Soo CHOI
  • Device and method for cleaning photomask
    Patent number: 7186301
    Abstract: Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: March 6, 2007
    Assignee: PKL Co., Ltd.
    Inventors: Yong Dae Kim, Jong Min Kim, Han Byul Kang, Hyun Joon Cho, Sang Soo Choi
  • PHASE SHIFT MASK FOR PREVENTING HAZE
    Publication number: 20060257752
    Abstract: Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.
    Type: Application
    Filed: March 22, 2006
    Publication date: November 16, 2006
    Applicant: PKL CO., Ltd.
    Inventors: Yong Dae Kim, Jong Min Kim, Han Byul Kang, Hyun Joon Cho, Sang Soo Choi
  • DEVICE AND METHOD FOR CLEANING PHOTOMASK
    Publication number: 20060207633
    Abstract: Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 21, 2006
    Applicant: PKL CO., Ltd.
    Inventors: Yong Dae KIM, Jong Min KIM, Han Byul KANG, Hyun Joon CHO, Sang Soo CHOI