Abstract: The present invention discloses an ionization apparatus 10 for ionizing an analyte S, comprising an inlet E, an outlet A, a first electrode 1, a second electrode 2 and a dielectric element 3. The first electrode 1, the second electrode 2 and the dielectric element 3 are arranged relative to one another such that, by applying an electric voltage between the first electrode 1 and the second electrode 2, a dielectric barrier discharge is establishable in a discharge area 5 in the ionization apparatus 10. The first and second electrodes 1, 2 are arranged such that they are displaceable or movable relative to each other.

Abstract: The present invention discloses an ionization apparatus 10 for ionizing an analyte S, comprising an inlet E, an outlet A, a first electrode 1, a second electrode 2 and a dielectric element 3. The first electrode 1, the second electrode 2 and the dielectric element 3 are arranged relative to one another such that, by applying an electric voltage between the first electrode 1 and the second electrode 2, a dielectric barrier discharge is establishable in a discharge area 5 in the ionization apparatus 10. The first and second electrodes 1, 2 are arranged such that they are displaceable or movable relative to each other.

Abstract: The present invention relates to the technical field of ionizing a gaseous substance, in particular the ionizing or ionization of a gaseous substance in preparation for its analysis. A device is intended to make a discharge gas and a test substance ionizable in a flow-through mode without essentially destroying or fragmenting the sample substance. In order to avoid a high expenditure in terms of construction and equipment, the device is intended to be usable under ambient conditions and to ensure a high sensitivity in a possible analysis of an ionized substance. To this end, an ionizing device is used for flow-through ionization of a discharge gas and of a sample substance at an absolute pressure of more than 40 kPa in the ionizing device during ionization. The ionizing device comprises an inlet, an outlet, a first electrode, a dielectric element and a second electrode.

Abstract: A plasma display panel having a trench discharge cell and a method of fabricating the same are disclosed in the present invention. The plasma display panel having a plurality of trench discharge cells includes a transparent substrate having at least one isolated trench in a discharge cell, one or more sustain electrodes in each trench and extended to outside of the trench, one or more bus electrodes on the sustain electrode, and a dielectric layer formed on an entire surface of the transparent substrate including the sustain electrodes, the bus electrodes, and the trench, wherein the dielectric layer has a first portion on the bottom of the trench, a second portion outside the trench of the substrate, and a third portion on side-walls of the trench, and wherein the trench has a first length perpendicular to a direction of the sustain electrodes and a second length parallel to a direction of the sustain electrodes and the first length is greater than the second length.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A method of forming an non-oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an inert gas into the process chamber, ionizing the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the non-oxide thin film on the substrate from the negatively charged ions.

Abstract: The specification and drawings describe and show embodiments of the present invention of an apparatus and method for emitting a cesium vapor. More specifically, the cesium vapor emitter of the present invention includes a housing having at least one chamber therein in fluid communication with at least one outlet, a reservoir containing cesium disposed in the chamber, a filter located between the cesium and the outlet, and a stopper securing the cesium reservoir in the chamber, so that the cesium vapor is emitted through the outlet.

Abstract: A method of forming an oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an oxygen gas and an inert gas into the process chamber, ionizing the oxygen gas and the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the oxide thin film on the substrate from the negatively charged ions reacted with the ionized oxygen gas.

Abstract: The present invention discloses an apparatus and a method of forming a thin film from negatively charged sputtered ions. More specifically, a sputter deposition apparatus for forming a thin film on a substrate includes at least one sputter target comprised of a material for the thin film, an ion gun emitting a neutralized ion beam towards the sputter target, a sputter gas source supplying a sputter gas into the ion gun, and a cesium vapor emitter inducing a plurality of negatively ionized sputtered particles from the sputter target and located in close proximity to the sputter target to introduce cesium vapor onto a reaction surface, wherein the cesium vapor emitter includes a feeding manifold having a plurality of apertures therein, a reservoir coupled to the feeding manifold and filled with a cesium slurry, and an on/off valve controlling an amount of the cesium vapor from the reservoir.

Abstract: A plasma treatment apparatus for a workpiece includes a metal electrode, a capillary dielectric having first and second sides and coupled to the metal electrode through the first side, wherein the capillary dielectric has at least one capillary, a shield body surrounding the metal electrode and the first side of the capillary dielectric, wherein the shield body has first and second end portions, and a gas supplier providing gas to the metal electrode.

Abstract: A method for fabricating a PDP is disclosed. The method for fabricating a PDP including the steps of preparing first and second panels for connecting with each other, forming at least one electrode on the first panel, forming a dielectric layer of PbO on the first panel, sequentially forming Cr and Ni on the PbO layer as a mask material of the PbO layer, performing photolithography and lift-off processes on the Ni/Cr layers to form a mask pattern of Ni/Cr, and etching the PbO layer using the mask pattern of Ni/Cr to form at least one capillary tube within the PbO layer to expose the electrode.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A method of fabricating a plasma display panel includes forming one or more electrodes on a substrate, forming a dielectric layer on the first electrode including the substrate, laminating a dry film photoresist on the dielectric layer, patterning the dry film photoresist using a mask, forming one or more capillary discharge sites in the dielectric layer using sand blasting, and removing the patterned dry film photoresist from the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A method and an apparatus for treating a workpiece using a plasma are disclosed in the present invention. In treating a workpiece using a plasma, the apparatus includes at least one pin electrode for receiving a power source, a dielectric body having first and second sides, wherein the first side is coupled to the pin electrode and the second side has at least one capillary extending to a direction of the first side of the dielectric body, and each capillary is substantially aligned with each pin electrode, and a counter electrode electrically coupled to the pin electrode for generating the plasma from each capillary.

Abstract: The specification and drawings describe and show embodiments of the present invention in the cesium vapor emitter and the method of fabricating the same. More specifically, the cesium vapor emitter of the present invention includes a housing having at least one chamber therein and at least one channel, wherein the channel has a size wide enough to introduce a desired amount of cesium vapor, a cesium reservoir placed in the chamber, wherein the cesium reservoir is filled with a cesium pellet and a plug located between the cesium pellet and the channel, thereby emitting the cesium vapor from the cesium pellet through the channel, and a stopper securing the cesium reservoir in the chamber, so that the cesium vapor is emitted through the channel.

Abstract: A plasma display panel having a trench discharge cell and a method of fabricating the same are disclosed in the present invention. The plasma display panel having a plurality of trench discharge cells includes a transparent substrate having at least one isolated trench in a discharge cell, one or more sustain electrodes in each trench and extended to outside of the trench, one or more bus electrodes on the sustain electrode, and a dielectric layer formed on an entire surface of the transparent substrate including the sustain electrodes, the bus electrodes, and the trench, wherein the dielectric layer has a first portion on the bottom of the trench, a second portion outside the trench of the substrate, and a third portion on side-walls of the trench, and wherein the trench has a first length perpendicular to a direction of the sustain electrodes and a second length parallel to a direction of the sustain electrodes and the first length is greater than the second length.

Abstract: A capillary discharge plasma display panel with a field shaping layer is disclosed in the present invention. More particularly, a capillary discharge plasma display panel includes first and second substrates, at least one first electrode on the first substrate, a first dielectric layer on the first electrode including the first substrate, at least one second electrode on the second substrate, a second dielectric layer on the second electrode including the second substrate, wherein the second dielectric layer has at least one capillary discharge site corresponding to each second electrode, thereby generating a continuous plasma discharge from the capillary discharge site, a plurality of discharge spaces between the first and second dielectric layers, and at least one third electrode in the second dielectric layer for concentrating the continuous plasma discharge in the capillary discharge site.

Abstract: The present invention discloses a plasma display panel device and a method of fabricating the same including first and second substrates, a first electrode on the first substrate, a second electrode on the second substrate, a tape material on the second substrate including the second electrode, a plurality of third electrodes completely buried in the tape material, a plurality of barrier ribs connecting the first and second substrates formed on the second substrate, a UV-visible conversion layer on the second substrate including the second substrate between the barrier ribs, and a discharge chamber where discharge occurs between the first and second substrates, wherein the discharge chamber faces toward the second electrode through a single row of one or more capillaries formed in the tape material.

Abstract: A method of fabricating a plasma display panel includes forming one or more electrodes on a substrate, forming a dielectric layer on the first electrode including the substrate, laminating a dry film photoresist on the dielectric layer, patterning the dry film photoresist using a mask, forming one or more capillary discharge sites in the dielectric layer using sand blasting, and removing the patterned dry film photoresist from the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A negative ion source is disclosed which includes an electrode, a target having a more negative electrical potential than the electrode, a supply of electrical energy for generating a discharge between the electrode and the target, and at least one magnet positioned so as to confine electrons, generated as a result of said discharge, in close proximity to a first surface of the target. The negative ion source further includes a delivery system for delivering cesium to a second surface of the target, and a distribution chamber interposed between the delivery system and the target for uniformly distributing cesium on the second surface of said target. The cesium diffuses through openings in the target from the first surface to the second surface. The negative ion source may comprise a conventional magnetron sputter source that has been retrofitted to include a cesium distribution system.