Abstract: Hybrid circuit structures and methods of fabrication particularly suitable for the fabrication of high density multi-layer interconnects utilizing silicon substrates are disclosed. In accordance with the method, a layer of alumina is put down over the silicon substrate, typically having an oxide layer thereover, which layer of alumina acts as a blocking barrier to any subsequent plasma etching process for etching polymer layers thereover during the subsequent high density multilayer interconnect fabrication steps. Various representative high density multi-layer interconnect structures on silicon substrates and methods of forming the same are disclosed, including the inclusion of an adhesion enhancement layer over the layer of alumina to enhance the adhesion of a polymer which would not otherwise adhere well directly to the layer of alumina.

Abstract: A laser lithography process for semiconductor interconnect and semiconductor manufacture having the advantages of non-contact printing processes and being much faster than prior art laser lithography processes is disclosed. In accordance with the process, a metal layer to be patterned either for use as a patterned metal layer or as a mask for patterning a layer therebelow, such as a think polyimide layer, is first coated with a very thin layer of polymer evaporated as a monomer using a vapor deposition process. This provides a very thin layer of polymer over the metal layer, which thin polymer layer is readily and quickly patterned by laser to provide a mask for the subsequent chemical etching of the metal layer. The vapor deposited polymer layer, while being very thin and thus readily removed by laser, is also substantially fault free, thereby providing a high-quality mask for the chemical etching process free of any possible damage from ordinary sources such as mask aligners, etc.

Abstract: Methods of making an electrical probe diaphragm wherein the diaphragm is integral with the surrounding support structure, which methods are conducive to the fabrication probing circuitry integral therewith. In accordance with the method, a substrate having first and second surfaces is coated on the first surface with an uncured polymer film in the polymer cured. Also, one or more pattern metalization layers are provided, typical over the polymer layer and extending peripherally outward to contact regions near the periphery of the substrate, preferably accessible from the second side of the substrate so contact with the pattern metalization layer or layers forming the probe circuitry may be made from the second side of the substrate.