Abstract: An uninterruptible power system and an operation method thereof are provided. The uninterruptible power system comprises a DC-AC conversion circuit, a plurality of switches, a plurality of sensing units, a plurality of output ports and a control unit. Each output port is electrically coupled to an output terminal of the DC-AC conversion circuit sequentially through one of the sensing units and one of the switches. The control unit is configured to define members of at least one group from the output ports according to a system setting, and define which members of each group are non-critical output ports according to the system setting. The control unit is further configured to set, according to the system setting, at least one condition for all non-critical output ports in each group to simultaneously stop supplying power, and to accordingly control the operations of the corresponding switches.

Abstract: An eFuse for use in high voltage applications is disclosed. In one embodiment, an apparatus includes a solid-state switch having source and drain terminals connected to switch a load current from a high voltage source through a high voltage load. The apparatus also includes a sense circuit that senses a voltage between the switch source and drain terminals and turns off the switch when the voltage exceeds a selected voltage level.

Abstract: Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JFET also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.

Abstract: A transistor includes a III-nitride substrate, a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type, and a plurality of III-nitride fins on the first III-nitride layer, wherein each of the plurality of III-nitride fins is separated by one of a plurality of first recess regions and characterized by a fin surface, wherein the plurality of III-nitride fins are characterized by the first conductivity type. The transistor also includes a III-nitride gate layer having a second conductivity type opposite to the first conductivity type in the plurality of first recess regions, wherein a surface of the III-nitride gate layer is substantially coplanar with the fin surface, and a regrown III-nitride source contact portion coupled to each of the plurality of III-nitride fins, wherein the regrown III-nitride source contact portion is characterized by the first conductivity type.

Abstract: A vapor-compression multi-evaporator cooling system comprises a cooling control system and two or more evaporators each coupled to an expansion valve. Each evaporator is selectively enabled or disabled during operation. When an evaporator is enabled, the evaporator transfers heat into a working fluid within the system. When an evaporator is disabled, the evaporator does not exchange any appreciable amount of heat within the system. The cooling control system includes a cooling controller, an adjustable compressor, a condenser, and a variable speed fan that provides selectable amounts of cooling to the condenser. During operation, the cooling controller adjusts the compressor operation and fan speed to maintain stable operation of the cooling system. To compensate for enabling or disabling of evaporators, the cooling controller adjusts compressor operation and fan speed to provide more or less compression and more or less condenser cooling to maintain stable and efficient operation of the cooling system.

Abstract: A fuel cell power plant includes an energy storage system connected in parallel with a fuel cell system. The fuel cell system includes a controller, a fuel flow system, an air flow system, and an internal water management system. The controller is operable to receive, as inputs, the energy storage system state of charge and the power demand from an electric load. The controller is further operable to determine a power split set point and execute commands, as output, to control operation of the air flow system, wherein the air flow system actively regulates the proportion of current flow between the fuel cell system and the energy storage system to meet the power demand of the electric load.

Abstract: A resonant converter has a primary resonant tank circuit and a secondary resonant tank circuit. An inverter circuit converts an input DC voltage received by the resonant converter at an input voltage node to a pulsating signal that is fed to the primary resonant tank circuit to generate a resonant tank current that flows through a primary winding of a transformer. The resonant tank current induces current in a secondary winding of the transformer. The induced current is rectified by a rectifier and the rectified signal is filtered by an output capacitor to generate an output DC voltage at an output voltage node. The secondary resonant tank circuit is disposed between the input voltage node and the output voltage node to inject odd order harmonics of the operating frequency to the primary tank circuit to shape the resonant tank current.

Abstract: A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.

Abstract: A self-oscillating converter includes a power transistor coupled to a primary winding for controlling current flow in the primary winding, and a turn-on circuit configured to turn on the power transistor for maintaining oscillation in the self-oscillating converter. The self-oscillating converter also includes a turn-off circuit configured to turn off the power transistor to maintain an on-time of the power transistor at a pre-set value for power factor correction, and modulate the on-time of the power transistor to regulate the output current in the load device.

Abstract: A load shed module configured to be connected in series between a power supply and a load is disclosed. A separate load shed module is connected in series between each load and the power supply. The load shed module determines the frequency of the voltage supplied from the power supply. Based on the frequency, the load shed module determines if utility power is connected or if a generator is connected. If the generator is connected and the frequency of the voltage goes outside of a desired operating range for a preset time, the load shed module disconnects the load from the power supply. Each load shed module includes a priority setting and reconnects its corresponding load after a predetermined time corresponding to the priority setting.

Abstract: A method of clamping a voltage includes providing a fin-based field effect transistor (FinFET) device. The FinFET device includes an array of FinFETs. Each FinFET includes a source contact electrically coupled to a fin and a gate contact. The method also includes applying the voltage to the source contact and applying a second voltage to the gate contact. The voltage is greater than the second voltage. The method further includes increasing the voltage to a threshold voltage and conducting current from the source contact to the gate contact in response to the voltage reaching the threshold voltage.

Abstract: A vertical, FinFET device includes an array of FinFETs comprising a plurality of rows and columns of fins. Each of the fins has a fin length and a fin width, a first fin tip, a second fin tip, and a central region disposed between the first fin tip of a first row of the plurality of rows and the second fin tip of a second row of the plurality of rows. The central region is characterized by an electrical conductivity. The FinFET device also includes a neutralized region including the first fin tip, a region between the first row of the plurality of rows and the second row of the plurality of rows, and the second fin tip. The neutralized region is characterized by a second electrical conductivity less than the electrical conductivity of the central region. The FinFET device further includes an electrical conductor disposed over the neutralized region.

Abstract: A method for manufacturing a vertical JFET includes providing a III-nitride substrate having a first conductivity type and forming a first III-nitride layer coupled to the III-nitride substrate. The first III-nitride layer is characterized by a first dopant concentration and the first conductivity type. The method also includes forming a plurality of trenches within the first III-nitride layer and epitaxially regrowing a second III-nitride structure in the trenches. The second III-nitride structure is characterized by a second conductivity type. The method further includes forming a plurality of III-nitride fins, each coupled to the first III-nitride layer, wherein the plurality of III-nitride fins are separated by one of a plurality of recess regions, and epitaxially regrowing a III-nitride gate layer in the recess regions. The III-nitride gate layer is coupled to the second III-nitride structure and the III-nitride gate layer is characterized by the second conductivity type.

Abstract: The present invention is generally directed to energy storage systems comprising manufactured architectural materials having electrical battery systems embedded therein. The manufactured materials are generally provided as architectural panels, such as panels useful for interior or exterior cladding for buildings, flooring, countertops, or stairs. The panels comprise at least one battery device or battery assembly that is over-formed by and/or bonded with the architectural material. In preferred embodiments, the panels are formed by flowing a viscous architectural material precursor around the battery device or assembly and curing the precursor so as to solidify the architectural material. The panels may be electrically connected in any number of various arrangements, which can be chosen based on the specific application for the energy storage system.

Abstract: An electric power system is disclosed herein. The electric power system may manage and store electric power and provide uninterrupted electric power, derived from a plurality of electric power sources, to an electric load. The electric power system may contain an energy storage unit and generator assembly. The electric power system may connect to a power grid and renewable energy sources, and may charge the energy storage unit using the power grid, renewable energy sources, and/or generator assembly. The electric power system may be configured to determine load power usage and environmental factors to automatically and continuously modify a charging protocol to, for example, provide high efficiency and/or self-sufficiency from the power grid. The electric power system may operate entirely off-grid and may provide electricity to the load without interruption to power.

Abstract: A method of measuring an AC input voltage at an input of a power converter includes measuring a DC bus voltage corresponding to the power converter. During a positive half-cycle of the AC input voltage, the method includes measuring a first voltage at the input of the power converter. During a negative half-cycle of the AC input voltage, the method includes turning on a high-side switch, measuring a second voltage at the input of the power converter, and computing a third voltage equal to the second voltage minus the DC bus voltage. The method further includes providing the AC input voltage as the first voltage during the positive AC half-cycle and the third voltage during the negative AC half-cycle.

Abstract: A vertical fin-based field effect transistor (FinFET) device includes an array of FinFETs comprising a plurality of rows and columns of fins, each of the fins having a fin length and a fin width measured laterally with respect to the fin length and including a first fin tip disposed at a first end of the fin; a second fin tip disposed at a second end of the fin opposing the first end; a bridging structure connecting the first fin tip to an adjacent fin; a central region disposed between the first fin tip and the second fin tip and characterized by an electrical conductivity; and a source contact electrically coupled to the central region. The FinFET device also includes a gate region surrounding the fins.

Abstract: An integrated circuit of a buck-boost converter working in a buck mode with a buck power switching cycle, a boost mode with a boost power switching cycle or a buck-boost mode with a buck-boost power switching cycle. The integrated circuit integrates a first power switch, a second power switch, a third power switch and a fourth power switch, and an output current sensing circuit. The buck-boost power switching cycle consists of a first buck-boost phase, a second buck-boost phase and a third buck-boost phase. The output current sensing circuit samples the current flowing through the first power switch during the second buck-boost phase and the current flowing through the fourth power switch during the third buck-boost phase so as to generate the output current information.

Abstract: Engines operating using multiple, different types of fuel are described. The engines may include components that control the introduction of fuels and/or reduce premature pre-ignition of fuels, such as a fuel comprising a percentage of hydrogen. The described hydrogen-fueled engines have a reduced carbon footprint.

Abstract: A blower includes a motor mounted to a frame. The frame includes wheels mounted to the frame. The blower includes a fan powered by the motor and a blower outlet. The fan is configured to expel air from the fan through the blower outlet. The blower outlet is movable in a horizontal direction and a vertical direction. The blower includes a horizontal control for controlling a horizontal position of the blower outlet. The blower includes a vertical control for controlling a vertical position of the blower outlet. Both the horizontal and vertical controls are positioned remote from the blower outlet.