Abstract: There are disclosed an apparatus and method for cleaning a precision substrate through use of high-frequency- or ultrasonic-applied cleaning liquid. An object substrate is horizontally held and rotated. High-frequency- or ultrasonic-applied cleaning liquid is jetted toward the surface of the object substrate from first cleaning liquid jetting unit disposed above the object substrate, and the nozzle of the first cleaning liquid jetting unit is moved in parallel with the surface of the object substrate. Cleaning liquid is also fed toward the central portion of the surface of the object substrate from cleaning liquid feed-to-center unit during cleaning. In the cleaning apparatus and method, a sufficiently high cleaning speed is attained.

Abstract: In a cleaning apparatus, a cleaning solution spray means itself is given a function of producing OH.sup.- ionized water and H.sup.+ ionized water and can spray OH.sup.- ionized water and H.sup.+ ionized water, as cleaning solutions immediately after they are produced, upon a substrate to be cleaned, and one of OH.sup.- ionized water and H.sup.+ ionized water can be selectively used as a cleaning solution. This cleaning apparatus includes a substrate holding member for holding a substrate to be cleaned, and a cleaning solution spray member for spraying a cleaning solution upon the substrate. The cleaning solution spray member includes an electrolytic ion generating member for radical-activating or ionizing pure water, and an ultrasonic wave generating member for spraying the radical-activated or ionized pure water, by carrying it on ultrasonic waves, upon the substrate.

Abstract: A cleaning solution and cleaning method are provided which: (1) make treatment at room temperature possible, and do not require heating, (2) use little chemicals and water, (3) do not require specialized apparatuses, and moreover, (4) do not require the use of specialized chemicals. The cleaning solution of the present invention comprises pure water containing 20 ppb-100 ppb of oxygen and 2 ppb or more of nitrogen. Furthermore, the cleaning solution may comprise electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen. In the cleaning method of the present invention, the cleaning of a material to be cleaned is conducted in a cleaning solution comprising pure water containing 20 ppb-100 ppb of oxygen and 2 ppb-15 ppm of nitrogen, while applying ultrasound having a frequency of 30 kHz or more.

Abstract: A cleaning apparatus is disclosed which is capable of simultaneously and precisely cleaning two sides of a substrate required to be cleaned, such as a silicon wafer. The cleaning apparatus has a holding unit for horizontally holding a substrate required to be cleaned, a rotating unit for rotating the holding unit, a first cleaning-fluid injection unit disposed above the holding unit and arranged to inject cleaning fluid with high-frequency acoustic waves to the surface of the substrate supported by the holding unit and a second cleaning-fluid injection unit disposed below the holding unit and arranged to inject cleaning fluid to the reverse side of the substrate supported by the holding unit.

Abstract: An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an acid is replaced with a cleaning treatment with a temporarily acidic pure water which is produced electrolytically by the application of a DC voltage between an anode and a cathode bonded to the surfaces of a hydrogen-ion exchange membrane so that the acidic cleaning treatment can be performed under mild conditions so as to eliminate the troubles unavoidable in the conventional process. The apparatus used therefor comprises a rectangular vessel partitioned into a central anode compartment, in which the wafers are held in a vertical disposition within an upflow of pure water, and a pair of cathode compartments on both sides of the anode compartment by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which an anode plate and a cathode plate are bonded.

Abstract: An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity.

Abstract: Device for cleaning silicon wafers having an upper mist-generating chamber with a high frequency oscillator to generate an aqueous hydrofluoric acid mist and a lower region processing chamber separated by a partitioning wall having a shutter to open and close. Silicon wafers are held in an upright position in a rack. The processing chamber and the shutter have gas jets to eject gas between the silicon wafers and water spray heads in the processing chamber to spray water between the silicon wafers.