Patents Assigned to Precision Instrument Development Center of National Science Council
  • Patent number: 7189359
    Abstract: A detecting device for biochemical detections is provided. The detecting device includes a first substrate, a magnetic layer located on the first substrate, an isolation layer located on the magnetic layer, at least a first electrode located on the isolation layer, a first dielectric layer located on the first electrode, a first hydrophobic layer located on the first dielectric layer, a second substrate, at least a second electrode located on the second substrate and having a cathode and an anode, a second dielectric layer located on the second electrode' and a second hydrophobic layer located on the second dielectric layer. The first electrode is zigzag-shaped, and the cathode and the anode of the second electrode are comb-shaped and interlaced with each other.
    Type: Grant
    Filed: July 28, 2004
    Date of Patent: March 13, 2007
    Assignees: National Tsing Hua University, Precision Instrument Development Center of National Science Council
    Inventors: Shih-Jun Yuan, Jing-Tang Yang, Jer-Liang Yeh, Chih-Sheng Yu, Yi-Chiuen Hu, Chien-Jen Chen
  • Patent number: 6950096
    Abstract: The present invention discloses a driver for amplifying an operating voltage of a low driving-voltage luminary. The driver includes a driving circuit providing a first signal, and a negative multiple voltage circuit electrically connected to the driving circuit and the luminary respectively for transforming the first signal into a second signal to be transmitted to the luminary, thereby the luminary being driven in response to the second signal. The luminary circuit is connected between power source (Vdd) and the negative multiple voltage circuit.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: September 27, 2005
    Assignee: Precision Instrument Development Center National Science Council
    Inventors: Tai-Shan Liao, Min-Li Chen
  • Patent number: 6797959
    Abstract: The sensitivity adjusting equipment applied to a photoelectric smoke detector is provided. The photoelectric smoke detector includes a luminous component for providing an input light and a detecting component for receiving an even output light. The sensitivity adjusting equipment includes a light-scattering device having a scattering component and an adjustable hole for scattering the input light evenly and adjusting an intensity of the input light so as to output the even output light to the detecting component. The sensitivity adjusting equipment also includes a movable platform having a first brace connected to the photoelectric smoke detector and a supporting base having a second brace connected to the light-scattering device. The movable platform is moved to make the photoelectric smoke detector and the light-scattering device combined to adjust the sensitivity of the photoelectric smoke detector.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: September 28, 2004
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Shenq-Tsong Chang, Ho-Lin Tsay, Tai-Shan Liao, Bih-Chang Wang, Ting-Ming Huang
  • Patent number: 6686706
    Abstract: A device for driving a light-emitting element via three transistors includes a driving circuit, a negative voltage circuit, and a protection circuit. The driving circuit has a first transistor and a second transistor for producing a first signal. The negative voltage circuit electrically connected to the driving circuit for transforming the first signal into a second signal to be transmitted to the light-emitting element, and the light-emitting element is driven in response to an operating voltage resulted from the voltage of the second signal and a power voltage. The protection circuit includes a third transistor having two terminals connected to the light-emitting element and the third terminal connected to a base of an NPN transistor for controlling the operating voltage so as to stabilize an output of the light-emitting element.
    Type: Grant
    Filed: November 14, 2002
    Date of Patent: February 3, 2004
    Assignee: Precision Instrument Development Center National Science Council
    Inventor: Tai-Shan Liao
  • Patent number: 6674281
    Abstract: The present invention provides a method for measuring both magnetic and electric fields of a DUT via an electro-optic probing technique at the same time. Also, the present invention provides a method for measuring both electric and magnetic fields via a magneto-optic probing technique simultaneously. The method utilizes the modulation of the position of a probe to measure the electric and magnetic field signals. The DC and AC components of the modulated electric (or magnetic) field signals can be obtained by means of a low pass filter and a lock-in amplifier, respectively. Through a simple calculation, the electric and magnetic field can be obtained simultaneously.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: January 6, 2004
    Assignee: Precision Instrument Development Center National Science Council
    Inventor: Kuen-Wey Shieh
  • Publication number: 20030209670
    Abstract: A sensitivity adjusting equipment applied to a photoelectric smoke detector is provided. The photoelectric smoke detector includes a luminous component for providing an input light and a detecting component for receiving an even output light. The sensitivity adjusting equipment includes a light-scattering device having a scattering component and an adjustable hole for scattering the input light evenly and adjusting an intensity of the input light so as to output the even output light to the detecting component. The sensitivity adjusting equipment also includes a movable platform having a first brace connected to the photoelectric smoke detector and a supporting base having a second brace connected to the light-scattering device. The movable platform is moved to make the photoelectric smoke detector and the light-scattering device combined to adjust the sensitivity of the photoelectric smoke detector.
    Type: Application
    Filed: August 19, 2002
    Publication date: November 13, 2003
    Applicant: Precision Instrument Development Center, National Science Council
    Inventors: Shenq-Tsong Chang, Ho-Lin Tsay, Tai-Shan Liao, Bih-Chang Wang, Ting-Ming Huang
  • Publication number: 20030173960
    Abstract: The present invention provides a method for measuring both magnetic and electric fields of a DUT via an electro-optic probing technique at the same time. Also, the present invention provides a method for measuring both electric and magnetic fields via a magneto-optic probing technique simultaneously. The method utilizes the modulation of the position of a probe to measure the electric and magnetic field signals. The DC and AC components of the modulated electric (or magnetic) field signals can be obtained by means of a low pass filter and a lock-in amplifier, respectively. Through a simple calculation, the electric and magnetic field can be obtained simultaneously.
    Type: Application
    Filed: March 18, 2002
    Publication date: September 18, 2003
    Applicant: Precision Instrument Development Center, National Science Council
    Inventor: Kuen-Wey Shieh
  • Publication number: 20030057883
    Abstract: A light emitting element driver composed of two transistors, one ground resistor, one inductance and one capacitor is disclosed, and it can drive a LED with a supplied voltage as low as about 0.92 V.
    Type: Application
    Filed: October 16, 2001
    Publication date: March 27, 2003
    Applicant: Precision Instrument Development Center, National Science Council
    Inventors: Tai-Shan Liao, Ming-Li Chen, Ming Hung Huang, Ho-Lin Tsay
  • Patent number: 6514814
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Grant
    Filed: June 20, 2001
    Date of Patent: February 4, 2003
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu
  • Patent number: 6514035
    Abstract: A multiple-type pump has a simple construction and superior durability. The multiple-type pump has the capacity to perform air evacuation at high velocities in the atomospheric pressure zone to high vacuum zone range. The multiple-type pump includes: a screw type pump air transfer portion arranged at a downstream portion of the outer surface of a rotor and has a plurality of screw threads and screw grooves with a width of 5 mm or more; a turbo-molecular type pump air transfer portion arranged at an upstream portion and has a plurality of vanes and air transfer grooves; vanes having vane widths of 3 mm or less at the upstream edge, and formed so that the downstream edge is continuous with the upstream edge of the screw threads; a downstream edge of the base of the air transfer grooves formed so as to be continuous with the upstream edge of the base of the screw grooves.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: February 4, 2003
    Assignees: Kashiyama Kougyou Industry Co., Ltd., Precision Instrument Development Center National Science Council
    Inventors: Matsumi Iwane, Rong-Yuan Jou
  • Patent number: 6493070
    Abstract: This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.
    Type: Grant
    Filed: August 22, 2000
    Date of Patent: December 10, 2002
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Chuen-Horng Tsai, Jyh-Shin Chen, Ming-Hwu Cheng, Ho-Yen Hsiao, Py-Shiun Yeh, Jiann-Shiun Kao
  • Patent number: 6466308
    Abstract: The present invention disclose a method for measuring a thermal expansion coefficient of a thin film, in which the thin film is first deposited on two substrates having different thermal expansion coefficients under the same conditions. For each of the two deposited substrates, a relationship between the thin film stresses and the measuring temperatures is established by using a phase shifting interferometry technique, in which the stresses in the thin films are derived by comparing the deflections of the substrates prior to and after the deposition. Based on the two relationships the thermal expansion coefficient, and elastic modulus, E f ( 1 - v f ) , can be calculated, wherein Ef and &ngr;f are the Young's modulus and Poisson's ratio of the thin film, respectively.
    Type: Grant
    Filed: April 12, 2000
    Date of Patent: October 15, 2002
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Cheng-Chung Lee, Chuen-Lin Tien, Ing-Jer Ho
  • Patent number: 6309895
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Grant
    Filed: January 27, 1999
    Date of Patent: October 30, 2001
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu
  • Patent number: 6302641
    Abstract: A multiple-type vacuum pump has a simple construction and superior durability. The multiple-type vacuum pump has the capacity to perform air evacuation at high velocities in the low to high vacuum zone range. The multiple-type vacuum pump includes: a screw type pump air transfer portion arranged at a downstream portion of the outer surface of a rotor and has a plurality of screw threads and screw grooves with a width of 5 mm or more; a turbo-molecular type pump air transfer portion arranged at an upstream portion and has a plurality of vanes and air transfer grooves; vanes having vane widths of 3 mm or less at the upstream edge, and formed so that the downstream edge is continuous with the upstream edge of the screw threads; a downstream edge of the base of the air transfer grooves formed so as to be continuous with the upstream edge of the base of the screw grooves.
    Type: Grant
    Filed: January 7, 2000
    Date of Patent: October 16, 2001
    Assignees: Kashiyama Kougyou Industry Co., Ltd., Precision Instrument Development Center National Science Council
    Inventors: Matsumi Iwane, Rong-Yuan Jou
  • Publication number: 20010029053
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Application
    Filed: June 20, 2001
    Publication date: October 11, 2001
    Applicant: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu