Abstract: The invention provides a process of forming a semiconductor device, including the steps of: forming a separation member, used to form a separation layer, on a flat surface of a support substrate; forming support sections on the flat surface by removing portions of the separation member; forming, above the support sections, a film structure having a single layer or a plurality of layers; and separating the film structure from the Support substrate by removing the separation layer.
Type:
Grant
Filed:
September 14, 1998
Date of Patent:
January 15, 2002
Assignee:
President of Tokyo University of Agriculture &
Technology