Abstract: A high-resolution and high-speed film thickness and thickness uniformity measurement method is disclosed in this invention. The disclosed method includes a step a) of measuring a film thickness at a single point on the top surface of the substrate using an interferometry with a measuring light beam having a range of wavelengths. The method further includes a step b) of selecting an optimal wavelength from the range of wavelengths applied for measuring the film thickness at the single point. The method further includes a step c) of measuring reflection intensities by scanning over a plurality of points with a measuring light beam of the optimal wavelength over the top surface of the substrate. The method further includes a step d) of calculating a film thickness at the plurality of points applying the optimal-wavelength reflection intensities at the plurality of points over the top surface of the substrate.

Abstract: This invention discloses an apparatus for measuring an ion-implantation ion energy and/or dosage. The apparatus includes a scanning densitometer for measuring a reflected light from a monitor substrate. The apparatus further uses a monitor substrate. A thin film is supported on the monitor substrate wherein the thin film has an optical characteristic that is sensitive to the ion-implantation. The apparatus further includes a light source for projecting a measuring beam onto the monitor substrate for generating a reflected light. The apparatus also includes a bare silicon substrate for measuring a full scale reflected light represented by I0 reflected from the bare silicon substrate with the light source projecting a full scale light onto the bare silicon substrate.

Abstract: This invention discloses an apparatus for measuring an ion-implantation ion energy and/or dosage. The apparatus includes a scanning densitometer for measuring a reflected light from a monitor substrate. The apparatus further uses a monitor substrate. A thin film is supported on the monitor substrate wherein the thin film has an optical characteristic that is sensitive to the ion-implantation. The apparatus further includes a light source for projecting a measuring beam onto the monitor substrate for generating a reflected light. The apparatus also includes a bare silicon substrate for measuring a full scale reflected light represented by I0 reflected from the bare silicon substrate with the light source projecting a full scale light onto the bare silicon substrate.

Abstract: A high-resolution and high-speed film thickness and thickness uniformity measurement method is disclosed in this invention. The disclosed method includes a step a) of measuring a film thickness at a single point on the top surface of the substrate using an interferometry with a measuring light beam having a range of wavelengths. The method further includes a step b) of selecting an optimal wavelength from the range of wavelengths applied for measuring the film thickness at the single point. The method further includes a step c) of measuring reflection intensities by scanning over a plurality of points with a measuring light beam of the optimal wavelength over the top surface of the substrate. The method further includes a step d) of calculating a film thickness at the plurality of points applying the optimal-wavelength reflection intensities at the plurality of points over the top surface of the substrate.