Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

Abstract: A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current.

Abstract: A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current.