Abstract: The invention relates to an ATR spectrometer for analysing the chemical composition of a sample, wherein the ATR spectrometer (1) comprises an ATR crystal (2), at least one infrared light source (5) being arranged on the entry surface (3), a line array (6) of infrared light detectors, at least one single infrared light detector (7), wherein the at least one infrared light source (5) is adapted to emit infrared light that enters the ATR crystal and is guided to the infrared light detectors under total internal reflection and under interaction with the sample being arranged immediately adjacent to the ATR crystal, a wavelength dispersive element (8) being arranged in the path of the infrared light so—that the line array is adapted to measure a spectrum of the infrared light, and a wavelength filter (9) being arranged in the path of the infrared light to the single infrared light detector, wherein at least one of the infrared light detectors is chosen to be a chosen infrared light detector for a signal correctio

Abstract: A switch actuating device for actuating a switch by eight types of non-tactile gestures performed with an object emitting heat includes a gesture sensor with four pixels configured to detect heat emitted by the object. The pixels include thin films made of pyroelectric sensitive material which generate a signal that has signal deflections corresponding to a temporal intensity curve of the heat detected by the thin film of the corresponding pixel. The types of the gestures are determined with a signal processing unit which controls an actuator to actuate the switch when a performance of one of the types of the gestures is determined. The gesture types are determined during an approach phase when the object approaches the gesture sensor, a waiting phase during when the object remains close to the gesture sensor, and a subsequent translational phase when the object moves in one of eight directions.

Abstract: A switch operating device (100) configured to operate a switch (103) with four possible types (111 to 114) of non-tactile translational gestures performed with a heat emitting part (115). A gesture sensor (1) is adapted to detect heat emitted by the part while performing one of the translational gesture types. Four pixels (21 to 24) are arranged next to each other and output a signal (51 to 54) per pixel, wherein the signal has a signal deflection (58) corresponding to the temporal intensity curve of the heat detected by the thin film of the corresponding pixel. A signal processing unit (101) determines the performance of the translational gesture types from the temporal succession of the signal deflections (58). An actuator (104) is controlled by the signal processing unit and operates the switch when one of the translational gesture types is determined.

Abstract: Switch operating device (100) with: a gesture sensor operating a switch (103) with a non-tactile push-gesture performed with a heat emitting part. The gesture has an approach phase (111) during which the part approaches the sensor, a waiting phase (113) during which the part remains proximate to the sensor, and a withdrawal phase (112) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs per pixel a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel while the gesture (115) is performed. A signal processing unit (101) which determines performance of the gesture from a temporal succession of signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the gesture is performed.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: Switch operating device (100) with: a presence sensor operating a switch (103) in response to presence of a heat emitting part. The presence has an approach phase (31) during which the part approaches the presence sensor, a remaining phase during which the part remains proximate to the sensor, and a withdrawal phase (41) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel. A signal processing unit (101) determines the approach and withdrawal phases from the temporal succession and the shape of the signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the approach phase, the remaining phase and/or the withdrawal phase is determined.

Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

Abstract: A method for producing a micro system, said method comprising: providing a substrate (2) made of aluminum oxide; producing a thin film (6) on the substrate (2) by depositing lead zirconate titanate onto the substrate (2) with a thermal deposition method such that the lead zirconate titanate in the thin film (6) is self-polarized and is present predominantly in the rhombohedral phase; and cooling down the substrate (2) together with the thin film (6).

Abstract: A sensor system for detecting motion in a predefined direction of motion (30) of an infrared light source (29) has at least one pair of infrared light sensors (4, 5; 36, 37), which are arranged side by side with respect to the direction of motion (30) and, thus, define a sensor coverage zone (17) determined by the distance between distal ends (16) (with respect to the direction of motion) of the infrared light sensors. During exposure to the infrared light source, the sensors provide electrical signals, the charge signs of which are opposite each other, for detecting the motion of the infrared light source (29). The sensor system (1) has a window (7) positioned between the infrared light source (29) and the sensors such that the infrared light of the infrared light source (29) radiates onto the sensors.

Abstract: In a device for detecting thermal radiation, at least one membrane is provided on which at least one thermal detector element is mounted for the conversion of the thermal radiation into an electric signal and at least one circuit support for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being connected together electrically by an electric contact which passes through the membrane. In addition, a method of producing the device with the following method steps is provided: a) provision of the membrane with the detector element and of at least one electrical through-connection and provision of the circuit support and b) bringing together the membrane and the circuit support in such a manner that the detector element and the readout circuit are connected together electrically by an electrical contact passing through the membrane.

Abstract: An infrared light sensor chip comprises a substrate (2), an infrared light sensor (9), which has a base electrode (10) that is in direct contact with one side (8) of the substrate (2) and which is used to attach the infrared light sensor (9) to the substrate (2), and a resistance thermometer (13), which has a resistance path (14) in direct contact with the side (8) of the substrate (2) adjacent to the infrared light sensor (9) and configured to measure the temperature of the substrate (2) via the resistance thermometer (13). The resistance path (14) is made of the same material of which the base electrode (10) is made.

Abstract: An infrared light detector has a carrier membrane with at least two sensor chips thereon located next to each other. The carrier membrane has at least two rows of holes therein, proceeding parallel to each other between the sensor chips. The respective holes in one of the rows are offset with respect to the holes in an adjacent row, thereby hindering heat transmission via the carrier membrane between the sensor chips.

Abstract: A method for producing an infrared light detector (1) has the steps of: providing a plurality of connection pins (11, 12), which are kept parallel to one another and arranged with one of the longitudinal ends (17, 18) thereof in a horizontal plane, and a printed circuit board (6) with a planar underside (8), in which a recess (15, 16) of the same form in each case is provided for each of the connection pins (11, 12); filling the recesses (15, 16) with a solder paste, so that in each of the recesses (15, 16) there is a solder paste body (21) with the same amount of solder paste; positioning the printed circuit board (6) over the connection pins (11, 12), so that each of the connection pins (11, 12) extends with its longitudinal end (17, 18) in the recess (15, 16) assigned to it and dips in the solder paste body (21) located in the respective recess (15, 16); liquefying the solder paste bodies (21), so that electrically conducting connections are formed between the connection pins (11, 12) and the solder paste

Abstract: A device to detect thermal radiation has a membrane and at least two detector elements that are respectively set up to transduce thermal radiation into an electrical signal and are mounted situated next to one another on the membrane, wherein at least one heat dissipation path is provided on the side of the membrane facing towards the detector elements and/or on the side of the membrane facing away from the detector elements, which heat dissipation path has a higher heat conductivity than the membrane and is connected with the detector elements in a heat-conductive manner via the membrane so that heat can be discharged from the detector elements with the heat dissipation path, whereby the response time of the detector elements is short; and wherein at least one heat barrier that has a lower heat conductivity than the membrane and extends between the detector elements is provided integrated into the membrane, such that a heat conduction in the membrane from the one detector element to the other detector elemen

Abstract: An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has

Abstract: An infrared light detector including at least one sensor chip that has a layer element that is produced from a pyroelectrically sensitive material and further has a base electrode and a head electrode, to which the layer element is connected for tapping electric signals generated in the layer element by irradiation of the at least one sensor chip with light. The detector further includes a transimpedance amplifier for amplifying the signals with an operational amplifier, which is asymmetrically operated by a supply voltage source having a positive supply voltage and to the inverting input of which the base electrode is connected. At the voltage supply source, a voltage divider connected to ground is provided with a partial node, to which a partial voltage that is smaller than the supply voltage is applied and which is electrically coupled to the non-inverting input and to the head electrode.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: An infrared light detector having a sensor chip (4), which includes a thin-film element (5) made from a pyroelectrically sensitive material, having an electrical insulator (27), at least one electronic component (17, 18) having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (2), on which the sensor chip (4) and the electronic component (17, 18) are mounted side by side in an integrated manner such that the electronic component (17, 18) is electrically conductively coupled to the thin-film element (5). A signal amplifier (22), with which, in co-operation with the electronic component (17, 18), an electrical signal emitted from the sensor chip (4) can be amplified, can be connected to the electronic component (17, 18).

Abstract: An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.

Abstract: An apparatus for detecting radiation has a substrate, a protective housing fitting on the substrate, which has an electrically conductive material and a top facing away from the substrate, and that has an aperture therein. A stack is fitted on the substrate inside the protective housing and includes at least one detector substrate having at least one thermal detector element thereon that converts incoming thermal radiation into an electrical signal, at least one circuit carrier having at least one read circuit for reading out the electrical signal, and at least one cover that covers the detector element. The detector substrate is located between the circuit substrate and the cover. The detector substrate and the cover are arranged on each other such that the detector element of the detector substrate and the cover have at least one first stack cavity of the stack therebetween, the stack cavity being defined by the detector support and the cover.