Abstract: The present invention provides an apparatus having stacked semiconductor components. Two semiconductor components (21, 26) are arranged such that their contact regions (28, 22) are opposite one another. A contact-connection device (29) forms a short electrical connection between the two contact regions (28, 22). The contact regions (28, 22) are connected to external contact regions (36) of the apparatus via a rewiring (23).

Abstract: A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 kgf, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds.

Abstract: An integrated circuit includes: a resistive memory having an array of resistive memory cells; a memory controller that controls operation of the resistive memory in accordance with external commands from an external device; and a memory scheduler coupled to the resistive memory and to the memory controller. The memory scheduler schedules internal maintenance operations within the resistive memory in response to trigger conditions indicated by at least one sensor signal or external command. The operation of the memory scheduler and performance of the internal maintenance operations are transparent to the external device and, optionally, transparent to the memory controller.

Abstract: An integrated circuit includes a substrate including isolation regions, a first conductive line formed in the substrate between isolation regions, and a vertical diode formed in the substrate. The integrated circuit includes a contact coupled to the vertical diode and a memory element coupled to the contact. The first conductive line provides a portion of the vertical diode.

Abstract: A memory system having a plurality of memory cells for storing payload data and redundancy data. The memory system having a read-out circuit configured to read-out a status of the plurality of memory cells, the read-out status having payload data, redundancy data and associated reliability information. Moreover, the memory system has a data processor configured to derive the payload data from the read-out status using the reliability information.

Abstract: An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

Abstract: A chip includes a memory array and a refresh counter. The refresh counter is configured to receive refresh trigger signals. The refresh counter is configured or configurable to initiate a refresh of the memory array only once per i of the received refresh trigger signals where i is a number greater than 1.

Abstract: A system and method is disclosed, including establishing of data connections between electronic devices. One embodiment provides a method for establishing a data connection between a first and a second electronic device, wherein establishing the data connection is authorized by executing at least one action with at least one physical tool.

Abstract: An integrated circuit including a hetero-interface and a manufacturing method thereof is disclosed. One embodiment includes forming a hetero-structure including a hetero-interface at a junction between a first region and a second region, and, thereafter introducing a material into the first region and at least up to the hetero-interface, wherein a diffusion constant of the material is higher in the first region than in the second region.

Abstract: A memory system having a plurality of memory cells for storing payload data and redundancy data. The memory system having a read-out circuit configured to read-out a status of the plurality of memory cells, the read-out status having payload data, redundancy data and associated reliability information. Moreover, the memory system has a data processor configured to derive the payload data from the read-out status using the reliability information.

Abstract: Method of fabricating an integrated electronic circuit with programmable resistance cells, which comprises providing a substrate; forming an inert electrode; forming a solid electrolyte on the inert electrode; forming an interlayer on the solid electrolyte, the interlayer comprising an active electrode material and nitrogen; and forming an active electrode on the interlayer, the active electrode comprising the active electrode material.

Abstract: A system and method utilize a memory device that may be accessed by a plurality of controllers or processor cores via respective ports of the memory device. Each controller may be coupled to a respective port of the memory device via a data bus. Each port of the memory device may be associated with a predefined section of memory, thereby giving each controller access to a distinct section of memory without interference from other controllers. A common command/address bus may couple the plurality of controllers to the memory device. Each controller may assert an active signal on a memory access control bus to gain access to the command/address bus to initiate a memory access. In some embodiments, a plurality of memory devices may be arranged in a memory package in a stacked die memory configuration.

Abstract: The present invention provides an integrated circuit including N1 NAND flash array segments with N2 local bit lines, N1 intra array multiplexers and N2/2 global bit lines. Further, the present invention provides a method of producing an integrated circuit including N1 NAND flash array segments with N2 local bit lines, N1 intra array multiplexers and N2/2 global bit lines.

Abstract: A semiconductor memory chip including error correction circuitry configured to receive data words from an external device, each data word comprising a binary number of data bits, and configured to error encode each data word to form a corresponding coded word comprising a non-binary number of data bits including the data bits of the data word and a plurality of error correction code bits. At least one memory cell array is configured to receive and store the coded word and partitioned based on the non-binary number of bits of the coded word so as to have a non-binary number of wordlines and provide the memory chip with an aspect ratio other than a 2:1 aspect ratio.

Abstract: A method for manufacturing a multiple-chip memory device includes making a volatile memory element on a semiconductor substrate, examining the volatile memory element for one or more initial errors, correcting the one or more initial errors on the semiconductor substrate, incorporating the volatile memory element into the multiple-chip memory device, and incorporating a non-volatile memory element into the multiple-chip memory device. The volatile memory element is examined for one or more secondary errors, after incorporating the volatile memory element and the non-volatile memory element into the multiple-chip memory device. Repair information is stored in a non-volatile memory element, the repair information identifying the one or more secondary errors.

Abstract: Alignment data from an exposure tool suitable for exposing a plurality of semiconductor wafers are provided, the alignment data including alignment values applied by the exposure tool to respective ones of the plurality of semiconductor wafers at a plurality of measured positions.

Abstract: A semiconductor device is disclosed. At least one semiconductor chip is mounted on a substrate and is contacted to contact elements of the substrate. The encapsulation of the semiconductor chip includes the substrate, a cover and a pocket within the connected substrate and cover. The pocket is able to fix the chip in its position, and the cover is composed of the same material as the substrate.

Abstract: A method of adjusting an interface voltage includes transferring data between a memory device and a controller, and detecting whether an error occurred in the transfer of data. An interface voltage of at least one of the memory device and the controller is adjusted based on the detection.

Abstract: An integrated circuit with a rectifier element. One embodiment provides a signal source, an electronic circuit and a rectifier element with a copper layer and a cuprous oxide layer adjacent to and in direct contact with the copper layer. The signal source is configured to drive a signal on a signal output terminal that is electrically coupled to the copper layer. The electronic circuit is electrically coupled to the cuprous oxide layer. The rectifier element may be formed between wiring layers of an integrated circuit.

Abstract: A memory device comprises a memory array and a processing device. The memory array is configured to store a graphic data set. The processing device is configured to initiate outputting of data of the graphic data set from the memory array and to combine the outputted data in response to a read request for providing a graphic content.