Abstract: A technique is disclosed for supplying backup power by providing a solid-state electrochemical capacitor with a layer of solid electrolyte material composed of RbAg.sub.4 I.sub.5, a layer of anode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a first surface of the electrolyte material, and a layer of cathode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a second surface of the electrolyte material. A current is supplied to charge the anode of the capacitor structure to a voltage in the range from 0.50 volts to 0.66 volts to cause storage of charge in the capacitor structure in both a double layer capacitance mode and a pseudo capacitance mode. The charged up capacitor is used to supply a backup voltage to a utilization device. In one embodiment, the anode includes a silver disk adjoining the electrolyte layer. In another embodiment, the anode contains platinized activated carbon and RbAg.sub.4 I.sub.5 to reduce silver dendrite growth during charging.

Abstract: A technique is disclosed for supplying backup power by providing a solid-state electrochemical capacitor with a layer of solid electrolyte material composed of RbAg.sub.4 I.sub.5, a layer of anode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a first surface of the electrolyte material, and a layer of cathode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a second surface of the electrolyte material. A current is supplied to charge the anode of the capacitor structure to a voltage in the range from 0.50 volts to 0.66 volts to cause storage of charge in the capacitor structure in both a double layer capacitance mode and a pseudo capacitance mode. The charged up capacitor is used to supply a backup voltage to a utilization device. In one embodiment, the anode includes a silver disk adjoining the electrolyte layer. In another embodiment, the anode contains platinized activated carbon and RbAg.sub.4 I.sub.5 to reduce silver dendrite growth during chraging.

Abstract: A technique is disclosed for supplying backup power by providing a solid-state electrochemical capacitor with a layer of solid electrolyte material composed of RbAg.sub.4 I.sub.5, a layer of anode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a first surface of the electrolyte material, and a layer of cathode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a second surface of the electrolyte material. A current is supplied to charge the anode of the capacitor structure to a voltage in the range from 0.50 volts to 0.66 volts to cause storage of charge in the capacitor structure in both a double layer capacitance mode and a pseudo capacitance mode. The charged up capacitor is used to supply a backup voltage to a CMOS memory. The capacitor structure is made by compressing the electrolyte, the anode, and the cathode together to produce molecular bonding without binder material, using compression forces of approximately 80,000 psi.