Abstract: The output optical beam from an angled-facet semiconductor laser diode is made to propagate parallel to the optical axis of the laser package with low optical back-reflection. In this way, the angled-facet devices are made compatible with conventional semiconductor laser packages enabling them to be economically incorporated in a wide-range of external semiconductor lasers and amplified spontaneous emission sources. The parallel beam is achieved by tilting the laser diode with respect to the front and back surfaces of the package.
Type:
Grant
Filed:
December 14, 1999
Date of Patent:
November 6, 2001
Assignee:
Quan Photonics, Inc
Inventors:
Peter John Schultz Heim, Gregg Switzer, Mario Dagenais