Abstract: A buffer or driver circuit drives a high-capacitance clock signal line inside an integrated circuit (IC). Power is reduced by limiting the voltage swing of the clock output. The clock voltage swing is limited to within a transistor threshold-voltage of power and ground by feeding the output voltage back to the gates of the driver transistors which drive the output clock signal line. Thus the output clock swings from Vtn to Vcc-.vertline.Vtp.vertline. rather than from ground to Vcc. The limited output swing reduces dynamic power which is more critical than static power in downstream logic receiving the clock for higher-speed clocks. Crowbar current from power to ground through the driver transistors is eliminated by turning off the active driver transistor before the complementary driver is turned on. The gates of the driver transistors are charged and discharged from the clock line capacitance rather than from power and ground.

Abstract: A structure and a method are provided in a table lookaside buffer (TLB) for translating a virtual memory address to a physical memory address. The virtual memory address is computed by adding to a base address an offset value. In the TLB of the present invention, each entry of the TLB is stored a previous base address, a partial sum of the previous virtual memory address computation, the sign bit of the previous offset value, and the value of the carry bit at the position of the sign bit of the previous offset value in the previous virtual memory address computation. The present invention is especially applicable to a data TLB used in conjunction with a two-way set associative data cache memory.

Abstract: A static RAM memory is arranged into groups of four cells sharing a single active region with a contact to one of the bit lines. The shared active region forms the sources of four access transistors. The group of four cells requires only one pair of bit lines instead of the usual two pairs of bit lines. Thus a pair of bit lines occurs for every two cells rather than for every cell. This increases the bit-line pitch and facilitates design and layout of the sense amps. Since only one of the four cells can drive the bit lines at any time, four word lines are used instead of only two. Each cell has two word lines crossing over it, and the cells in a row alternately connect to one or the other word line. Since word-line drivers and decoders are simpler and easier to lay out than the sense amps, the tighter word-line pitch is acceptable. An unused metal line occurs for every two columns of cells. The bit lines are shielded from this unused metal line by power and ground lines.