Abstract: In a memory component programmed to operate in a first operating mode and having a page buffer and a fixed-width data interface, N bits of a command/address value are decoded to access one of 2N columns of data within the page-buffer, with that column of data output via the fixed-width data interface over a first burst interval. If programmed to operate in a second operating mode, M bits of the command/address value are decoded to access a larger column of data—one of 2M columns of data within the page buffer, where M<N—with that larger column of data output via the fixed-width data interface over a second burst interval longer than the first burst interval.

Abstract: A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

Abstract: A method of processing memory instructions including receiving a memory related command from a client system in communication with a memory appliance via a communication protocol, wherein the memory appliance comprises a processor, a memory unit controller and a plurality of memory devices coupled to said memory unit controller. The memory related command is translated by the processor into a plurality of commands that are formatted to perform prescribed data manipulation operations on data of the plurality of memory devices stored in data structures. The plurality of primitive commands is executed on data stored in the memory devices to produce a result, wherein the executing is performed by the memory unit controller. A direct memory transfer of the result is established over the communication protocol to a network.

Abstract: A cryptographic accelerator (processor) retrieves data blocks for processing from a memory. These data blocks arrive and are stored in an input buffer in the order they were stored in memory (or other known order)—typically sequentially according to memory address (i.e., in-order.) The processor waits until a certain number of data blocks are available in the input buffer and then randomly selects blocks from the input buffer for processing. This randomizes the processing order of the data blocks. The processing order of data blocks may be randomized within sets of data blocks associated with a single read transaction, or across sets of data blocks associated with multiple read transactions.

Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. The memory module additionally includes a command input port to receive command and address signals from a controller and, also in support of capacity extensions, a command relay circuit coupled to the command port to convey the commands and addresses from the memory module to another module or modules. Relaying commands and addresses introduces a delay, and the buffer system that manages communication between the memory controller and the memory devices can be configured to time data communication to account for that delay.

Abstract: A method for operating a DRAM device. The method includes receiving in a memory buffer in a first memory module hosted by a computing system, a request for data stored in RAM of the first memory module from a host controller of the computing system. The method includes receiving with the memory buffer, the data associated with a RAM, in response to the request and formatting with the memory buffer, the data into a scrambled data in response to a pseudo-random process. The method includes initiating with the memory buffer, transfer of the scrambled data into an interface device.

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Abstract: Computing devices, methods, and systems for switch-based free memory tracking in data center environments are disclosed. An exemplary switch integrated circuit (IC), which is used in a switched fabric or a network, can include a processing device and a tracking structure that is distributed with at least a second switch IC. The tracking structure tracks free memory units that are accessible in a first set of nodes by the second switch IC. The processing device receives a request for a number of free memory units. The processing device forwards the request to a node in the first set of nodes that has at least the number of free memory units or forwards the request to the second switch IC that has at least the number of free memory units or responds to the request with a response that indicates that the request could not be fulfilled.

Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

Abstract: Disclosed is a memory system that has a memory controller and may have a memory component. The memory component may be a dynamic random access memory (DRAM). The memory controller is connectable to the memory component. The memory component has at least one data row and at least one tag row different from and associated with the at least one data row. The memory system is to implement a cache having multiple ways to hold a data group. The memory controller is operable in each of a plurality of operating modes. The operating modes include a first operating mode and a second operating mode. The first operating mode and the second operating mode have differing addressing and timing for accessing the data group. The memory controller has cache read logic that sends a cache read command, cache results logic that receives a response from the memory component, and cache fetch logic.

Abstract: Described are integrated-circuit die with differential receivers, the inputs of which are coupled to external signal pads. Termination legs coupled to the signal pads support multiple termination topologies. These termination legs can support adjustable impedances, capacitances, or both, which may be controlled using an integrated memory.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

Abstract: A programmable crossbar matrix or an array of steering multiplexors (MUXs) coalesces (i.e., routes) the data values from multiple known “bad” bit positions within multiple symbols of a codeword, to bit positions within a single codeword symbol. The single codeword symbol receiving the known “bad” bit positions may correspond to a check symbol (vs. a data symbol). Configuration of the routing logic may occur at boot or initialization time. The configuration of the routing logic may be based upon error mapping information retrieved from system non-volatile memory (e.g., memory module serial presence detect information), or from memory tests performed during initialization. The configuration of the routing logic may be changed on a per-rank basis.

Abstract: A buffer chip includes a first interface to receive in-band register access commands from a host and a second interface to receive side-band register access commands from the host. The buffer chip further includes an arbitration circuit coupled to the first interface and to the second interface, wherein the arbitration circuit is to receive control signals from the first interface indicating a first pending register access command for the first interface, and wherein the arbitration circuit is to select the first pending register access command from concurrent pending register access commands from the first interface and the second interface using the control signals. In addition, the buffer chip includes a command buffer register coupled to the arbitration circuit, wherein the arbitration circuit to perform, on the command buffer register, a register access operation corresponding to the first pending register access command.

Abstract: A memory device includes a first receive circuit to receive a control signal of a memory access request from a memory controller. A second receive circuit receives a timing signal from the memory controller. The memory device includes circuitry to transmit, during a calibration mode of operation, feedback to the memory controller along a data path, the feedback indicative of a phase relationship been the control signal and the timing signal.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

Abstract: A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract: A dynamic memory array of a DRAM device is operated using a bitline voltage that is greater than the operating (i.e., switching) voltage of a majority of the digital logic circuitry of the DRAM device. The digital logic circuitry is operated using a supply voltage that is lower than the voltage used to store/retrieve data on the bitlines of the DRAM array. This allows lower voltage swing (and thus lower power) digital logic to be used for a majority of the non-storage array logic on the DRAM device—thus reducing the power consumption of the non-storage array logic which, in turn, reduces the power consumption of the DRAM device as a whole.