Patents Assigned to RFTRON CO., LTD.
  • METHOD OF FORMING TIN OXIDE LAYER USING TIN METAL TARGET
    Publication number: 20170271152
    Abstract: Provided is a method of forming a tin oxide layer using a tin metal target which forms the tin oxide layer on a glass substrate using the tin metal target. The present invention provides the method of forming a tin oxide layer using a tin metal target, which includes forming a tin oxide buffer layer (SnO2) on the glass substrate by sputtering using the tin metal target and forming a tin oxide (SnO2?x) semiconductor layer (0<x?0.01) on the tin oxide buffer layer by sputtering using the tin metal target.
    Type: Application
    Filed: November 25, 2015
    Publication date: September 21, 2017
    Applicant: RFTRON CO., LTD
    Inventors: Kookrin CHAR, Jisoon IHM
  • Transparent compound semiconductor and production method therefor
    Patent number: 9755025
    Abstract: The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1?XLaXSnO3 (0<x<0.1) and has a charge mobility of at least 10 cm2/V·sec.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: September 5, 2017
    Assignee: RFTRON CO., LTD.
    Inventors: Kookrin Char, Jisoon Ihm