Abstract: Direct Metal Fabrication of metal parts is accomplished with a continuous thermal process in which partial reduction of the "green form" part leaves a thin carbon film that maintains the part's structural integrity. The remaining carbon catalyzes a eutectic reducing element to diffuse throughout the part forming organo-metallic bonds that bind the homogenized metal alloy. Supersolidus liquid phase sintering (SLPS) densities the alloy to provide a final part of parent material quality. The DMF process can be used in magnetographic printing to imprint an image.

Abstract: An ultra-low noise, high gain interface circuit for single-photon readout of known photodetectors from the x-ray to long IR bands at video frame rates. The detector current modulate's a load FET's gate-to-source voltage, which in turn modulates the gate-to-source voltage of a gain FET thereby producing a signal current that is an amplified facsimile of the detector current. The load FET's gate-to-source voltage is connected in the negative feedback loop of a low noise, high gain amplifier. This effectively reduces the resistance seen by the photodetector by the gain of the amplifier thereby reducing the interface circuit's RC time constant by the same amount. Because the amplifier pins the load FET's gate voltage for a given flux level, the load FET's 1/f noise is transferred to the amplifier thereby enabling single-photon readout sensitivity.

Abstract: A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch.

Abstract: An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs.

Abstract: An integrated, variable gain microwave frequency power amplifier comprises a number of individual amplifier stages which contain microwave frequency active devices. Each stage is fed with a common input signal, and the individual stage outputs are connected to respective micro-electromechanical (MEM) switches which, when closed, connect the individual outputs together to form the power amplifier's output. The power amplifier's gain is determined by the number of outputs connected together. The preferred switch provides low insertion loss and excellent electrical isolation, enabling a number of amplifier stages to be efficiently interconnected to provide a wide dynamic range power amplifier. The switches are preferably integrated on a common substrate with the active devices, eliminating the need for wire bonds and reducing parasitic capacitances.