Abstract: A polyurethane foam of the present disclosure is obtained from a polyurethane raw material containing a polyol component and a polyisocyanate component, and a gas for foaming. The polyurethane raw material contains a hydrophobic silica as a foam retention agent for retaining a foam and a light calcium carbonate, and a blending amount of the light calcium carbonate is 10 parts by weight or more based on 100 parts by weight of the polyol component.

Abstract: A polyurethane foam of the present disclosure is obtained from a polyurethane raw material containing a polyol component and a polyisocyanate component, and a gas for foaming. The polyurethane raw material contains a hydrophobic silica as a foam retention agent for retaining a foam and a light calcium carbonate, and the light calcium carbonate is 10 parts by weight or more based on 100 parts by weight of the polyol component.

Abstract: The present invention relates to a polyurethane foam obtained from a polyurethane raw material containing polyol, isocyanate, a foam stabilizer, a catalyst and a foam-forming gas by a mechanical froth method, wherein the polyol contains a castor oil-based polyol having a viscosity at 25° C. of 2,000 mPa·s or less, and a polyether-based polyol, the castor oil-based polyol is contained in an amount of from 20 to 80 parts by weight per 100 parts by weight of the polyol, the polyether-based polyol is contained in an amount of from 20 to 80 parts by weight per 100 parts by weight of the polyol, the polyurethane foam has an apparent density of from 100 to 700 kg/m3, and compressive residual strain at 100° C. of 20% or less, and the polyurethane foam can be preferably used as a sealing material in a neighboring region of a heat source.

Abstract: The present invention relates to a polyurethane foam obtained from a polyurethane raw material containing polyol, isocyanate, a foam stabilizer, a catalyst and a foam-forming gas by a mechanical froth method, wherein the polyol contains a castor oil-based polyol having a viscosity at 25° C. of 2,000 mPa·s or less, and a polyether-based polyol, the castor oil-based polyol is contained in an amount of from 20 to 80 parts by weight per 100 parts by weight of the polyol, the polyether-based polyol is contained in an amount of from 20 to 80 parts by weight per 100 parts by weight of the polyol, the polyurethane foam has an apparent density of from 100 to 700 kg/m3, and compressive residual strain at 100° C. of 20% or less, and the polyurethane foam can be preferably used as a sealing material in a neighboring region of a heat source.

Abstract: A single-layered polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafers, etc., which attains excellent step height reduction and in-plane uniformity and is integrally molded by reaction injection molding, is provided. The polishing pad is a polyurethane-based foam 12 having a desired shape, as obtained by molding a gas-dissolved raw material having an inert gas dissolved under pressure in a polyurethane-base resin raw material by a reaction injection molding method, and includes a polishing region 14 having a polishing surface 14a suitable for polishing semi-conductor materials, etc. and having a Shore D hardness in the range of from 40 to 80 and a stress reduction region 16 which is present in the side opposing to the polishing surface 14a and which, when provided with a stress adjusting portion 22 of a desired pattern, is set up so as to have an amount of deflection, as applied with a load of 0.05 MPa, of 10 ?m or more.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.