Abstract: A power electronics converter includes a carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes a power semiconductor switching element included in a power semiconductor prepackage. The power semiconductor prepackage includes a power semiconductor switching element and an electrical connection extending from a terminal of the power semiconductor switching element to an electrical connection side of the power semiconductor prepackage. The power electronics converter includes a heat sink arranged to remove heat from the power semiconductor prepackage, a thermal interface layer arranged between the heat removal side of the power semiconductor prepackage and the heat sink, and an electrical isolation layer arranged between the power semiconductor switching element and the heat sink. A product of a thermal conductivity of the thermal interface layer and a breakdown electric field strength of the electrical isolation layer is greater than or equal to 5 MVW/m2K.