Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Abstract: A hetero-contact solar cell has a front side provided for an incidence of solar radiation. The solar cell has an absorber of a crystalline semiconductor material of a first conductivity type, an amorphous semiconductor layer of the first conductivity type doped more highly than the absorber and an electrically conductive, transparent front side conduction layer provided on the amorphous semiconductor layer. A front side contact is provided on the solar cell and has spaced-apart contact structures. An emitter of a second conductivity type opposite to the first conductivity type is provided on a back side. A back side contact is arranged on the back side. The emitter-related absorption losses of the solar cells can be eliminated by the back side contact having a back side contact layer extending over the surface of the back side, and the front side conduction layer containing a specific resistance from 7×10?4 to 50×10?4 ?cm.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: In an ion implantation device and a method for the ion implantation of a substrate, a plasma having an ion density of at least 1010 cm?3, is generated by a plasma source in a discharge space. The discharge space is delimited in the direction of the substrate to be implanted by a plasma-delimiting wall. The plasma-delimiting wall being at plasma potential, and a pressure in the discharge space is higher than the pressure in the space in which the substrate is situated in the ion implantation device. The substrate bears on a substrate support, with its substrate surface opposite the plasma-delimiting wall. The substrate and/or the substrate support are/is utilized as a substrate electrode, which is put at a high negative potential relative to the plasma that ions are accelerated from the plasma in the direction of the substrate and implanted into the substrate.

Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Abstract: A device is provided for generating plasma by microwaves for CVD coating a substrate having a vacuum container into which a reaction gas can be fed and an electrical conductor arranged therein which is connected on each of both ends thereof to a device for coupling microwaves and to a voltage source with which a difference of potential can generated between the electrical conductor and the surrounding vacuum container. The electrical conductor is electrically insulated from the devices for coupling microwaves. The electrical conductor has a rod-shaped design or a curved run. The electrical conductor is connected to the voltage source via a feedthrough filter. The device for coupling microwaves expands in a funnel shape toward the electrical conductor and is partially or completely filled by a dielectric material. The device for coupling microwaves has groove-shaped recesses running along a circumference.

Abstract: A substrate processing apparatus includes an evacuatable process chamber configured to receive a substrate carrier having at least one substrate, a plasma generating module, a gas feed, a gas discharge and a vapor etching module provided in the process chamber. A substrate processing method includes introducing a substrate carrier including at least one substrate into an evacuatable process chamber, generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture, performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process and performing at least one of a coating, etching, surface modification and cleaning of the substrate.

Abstract: The invention relates to an ECR plasma source comprising a coaxial microwave supply line with an internal conductor and an external conductor, wherein the internal conductor with one end as the antenna passes through a vacuum flange in insulated fashion, which vacuum flange closes off an opening in the wall to the plasma space. A multipole magnet arrangement is provided coaxially with respect to the microwave supply line and its magnetic fields pass through the vacuum flange and form an annular-gap magnetic field in the plasma space coaxially with respect to the antenna.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.