Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: A single wafer type wet-cleaning apparatus for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: A substrate cleaning system for cleaning wafers using a sheet-type wet cleaning treatment. The system has a sealable system body, a loading/unloading booth having a substrate carry-in section in which a plurality of substances are stocked to be carried in before a cleaning treatment is applied to them and a substrate carry-out section in which a plurality of substrates are stocked to be carried out after the cleaning treatment is applied, a processing booth provided with at least one sheet-type substrate cleaning chamber in which the cleaning treatment can be applied to a plurality of substrates by a plurality of cleaning solutions, and a robot booth provided with a transport robot for transporting the substrates one by one between the processing booth and the loading/unloading booth, the respective booths having partition walls.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50° C.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . ,, which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.