Patents Assigned to SAMSUNG ELECTRONINCS CO., LTD.
  • Patent number: 11512389
    Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: November 29, 2022
    Assignee: SAMSUNG ELECTRONINCS CO., LTD.
    Inventors: Keewon Kim, Daehan Kim, Minkyung Lee
  • Patent number: 10691016
    Abstract: An etching effect prediction method includes determining a sample area of a mask pattern in which etch bias is to be predicted, determining input parameters indicating physical characteristics affecting an etching process undertaken in the sample area, comparing an output value obtained by inputting the input parameters to an artificial neural network, to a measured value of the etch bias that occurred in the sample area, and operating the artificial neural network until a difference between the output value and the measured value is equal to or less than a predetermined reference value.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: June 23, 2020
    Assignee: Samsung Electronincs Co., Ltd.
    Inventor: Seong Bo Shim
  • Patent number: 9865231
    Abstract: Methods of adaptive image compensation are provided. A method of adaptive image compensation includes receiving illumination information sensed by a light sensor. The method includes calculating image characteristic information by analyzing an input image. The method includes determining a frame rate responsive to at least one among the illumination information, the image characteristic information, and a frame rate control signal. Moreover, the method includes compensating the input image responsive to the frame rate. Related apparatuses and image processing systems are also provided.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: January 9, 2018
    Assignee: Samsung Electronincs Co., Ltd.
    Inventors: Bo Young Kim, Kyoung Man Kim
  • Publication number: 20150160609
    Abstract: An image forming apparatus includes a main body having a fusing unit, a first temperature sensor which is disposed in an external surface of the main body and measures an outside temperature, a humidity sensor which is disposed in the external surface of the main body and measures an outside humidity, a second temperature sensor which is disposed inside the main body and measures an inside temperature, at least one fan disposed in the main body, and a controller configured to calculate a dew point temperature using the inside temperature and the outside humidity and operate the at least one fan based on the calculated dew point temperature.
    Type: Application
    Filed: June 24, 2014
    Publication date: June 11, 2015
    Applicant: Samsung Electronincs Co., Ltd.
    Inventors: Jeong-jae SEONG, Jin-ho PARK, Young-min YOON, Byung-jo LEE
  • Publication number: 20080237737
    Abstract: A semiconductor structure is provided which includes a first semiconductor device in a first active semiconductor region and a second semiconductor device in a second active semiconductor region. A first dielectric liner overlies the first semiconductor device and a second dielectric liner overlies the second semiconductor device, with the second dielectric liner overlapping the first dielectric liner at an overlap region. The second dielectric liner has a first portion having a first thickness contacting an apex of the second gate conductor and a second portion extending from peripheral edges of the second gate conductor which has a second thickness substantially greater than the first thickness. A first conductive via contacts at least one of the first or second gate conductors and the conductive via extends through the first and second dielectric liners at the overlap region. A second conductive via may contact at least one of a source region or a drain region of the second semiconductor device.
    Type: Application
    Filed: March 29, 2007
    Publication date: October 2, 2008
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, SAMSUNG ELECTRONINCS CO., LTD.
    Inventors: Xiangdong Chen, Jun Jung Kim, Young Gun Ko, Jae-Eun Park, Haining S. Yang