Patents Assigned to SAMSUNG ELEOTRONICS CO., LTD.
  • Patent number: 11741954
    Abstract: Provided are a method and an apparatus for providing an intelligent voice response at a voice assistant device. The method includes obtaining, by a voice assistant device, a voice input from a user, identifying non-speech input while obtaining the voice input, determining a correlation between the voice input and the non-speech input, and generating, based on the correlation, a response comprising an action related to the correlation or a suggestion related to the correlation.
    Type: Grant
    Filed: February 11, 2021
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELEOTRONICS CO., LTD.
    Inventors: Vinay Vasanth Patage, Sourabh Tiwari, Ravibhushan B. Tayshete
  • Patent number: 11722673
    Abstract: Provided is a video decoding method including: obtaining, from a bitstream, intra prediction mode information indicating an intra prediction mode of a current block; determining an interpolation filter set to be used in prediction of the current block, based on at least one of a size of the current block and the intra prediction mode indicated by the intra prediction mode information; determining a reference location to which a current sample of the current block refers according to the intra prediction mode; determining, in the interpolation filter set, an interpolation filter that corresponds to the reference location; determining a prediction value of the current sample, according to reference samples of the current block and the interpolation filter; and reconstructing the current block, based on the prediction value of the current sample.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: August 8, 2023
    Assignee: SAMSUNG ELEOTRONICS CO., LTD.
    Inventors: Narae Choi, Minwoo Park, Minsoo Park, Seungsoo Jeong, Kiho Choi, Woongil Choi, Anish Tamse, Yinji Piao
  • Patent number: 11722712
    Abstract: A source device for transmitting content to a sink device is provided. The source device may include an interface configured to perform high-bandwidth digital content protection (HDCP) authentication with the sink device, and a controller configured to determine an HDCP version supported by the sink device, convert the content so as to be encrypted in the HDCP version supported by the sink device in response to a determination that another HDCP version applied to the content is not supported by the sink device, encrypt the converted content in the HDCP version supported by the sink device, and control the interface to transmit the content to the sink device.
    Type: Grant
    Filed: August 6, 2021
    Date of Patent: August 8, 2023
    Assignee: SAMSUNG ELEOTRONICS CO., LTD.
    Inventor: Sung-bo Oh
  • Patent number: 11694994
    Abstract: A semiconductor chip stack includes first and second semiconductor chips. The first chip includes a first semiconductor substrate having an active surface and an inactive surface, a first insulating layer formed on the inactive surface, and first pads formed in the first insulating layer. The second semiconductor chip includes a second semiconductor substrate having an active surface and an inactive surface, a second insulating layer formed on the active surface, second pads formed in the second insulating layer, a polymer layer formed on the second insulating layer, UBM patterns buried in the polymer layer; and buried solders formed on the UBM patterns, respectively, and buried in the polymer layer. A lower surface of the buried solders is coplanar with that of the polymer layer, the buried solders contact the first pads, respectively, at a contact surface, and a cross-sectional area of the buried solders is greatest on the contact surface.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: July 4, 2023
    Assignee: SAMSUNG ELEOTRONICS CO., LTD.
    Inventor: Yongho Kim
  • Patent number: 11693386
    Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor p
    Type: Grant
    Filed: August 13, 2020
    Date of Patent: July 4, 2023
    Assignee: SAMSUNG ELEOTRONICS CO., LTD.
    Inventors: Jaeho Kim, Kanghyun Baek, Kwanghee Lee, Yongwoo Jeon, Uihui Kwon, Yoonsuk Kim