Abstract: Methods and apparatus for storing erase counts in a non-volatile memory of a non-volatile memory system are disclosed. According to one aspect of the present invention, a data structure in a non-volatile memory includes a first indicator that provides an indication of a number of times a first block of a plurality of blocks in a non-volatile memory has been erased. The data structure also includes a header that is arranged to contain information relating to the blocks in the non-volatile memory.
Type:
Application
Filed:
October 28, 2002
Publication date:
April 29, 2004
Applicant:
SanDisk Corporation, A Delaware Corporation
Inventors:
Robert C. Chang, Bahman Qawami, Farshid Sabet-Sharghi
Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.
Type:
Application
Filed:
February 5, 2003
Publication date:
October 30, 2003
Applicant:
SanDisk Corporation, a Delaware Corporation
Inventors:
Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong