Abstract: A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. This arrangement can be applied to de-duplication: for data sets stored in a primary data storage section, corresponding data keys can be generated and store in search NAND. A received key, rather from external to the system or internally generated, can then be compared against the search NAND.

Abstract: A NAND Flash based content addressable memory (CAM) is used for a key-value addressed storage drive. The device can use a standard transport protocol such as PCI-E, SAS, SATA, eMMC, SCSI, and so on. A host writes a key-value pair to the drive, where the drive writes the keys along bit lines of a CAM NAND portion of the drive and stores the value in the drive. The drive then maintains a table linking the keys to location of the value. In a read process, the host provides a key to drive, which then broadcasts down the word lines of blocks storing the keys. Based on any matching bit lines, the tables can then be used to retrieve and supply the corresponding data to the host. This arrangement can be applied to de-duplication: for data sets stored in a primary data storage section, corresponding data keys can be generated and store in search NAND. A received key, rather from external to the system or internally generated, can then be compared against the search NAND.

Abstract: A method for fabricating non-volatile storage having individually controllable shield plates between storage elements. The shield plates are formed by depositing a conductive material such as doped polysilicon between storage elements and their associated word lines, and providing contacts for the shield plates. The shield plates reduce electromagnetic coupling between floating gates of the storage elements, and can be used to optimize programming, read and erase operations. In one approach, the shield plates provide a field induced conductivity between storage elements in a NAND string during a sense operation so that source/drain implants are not needed in the substrate. In some control schemes, alternating high and low voltages are applied to the shield plates. In other control schemes, a common voltage is applied to the shield plates.