Abstract: A switching power supply device that switches setting of an output voltage based on an external signal according to one or more embodiments includes: a transformer including a primary winding and n secondary windings; n synchronous rectification elements provided, corresponding to the n secondary windings; and n?1 switch elements that switch the secondary windings. Each of the n?1 switch elements is kept on or off according to a high or low voltage value out of set voltages of the output voltage, and all or any of the n synchronous rectification elements are selected to synchronously rectify pulse voltage of the secondary windings, and when operation with a high set value of the output voltage stops, a synchronous rectification element used to output the high set value performs switching operation until the output voltage goes down to the low voltage value of the set voltages of the output voltage.

Abstract: A rectification circuit rectifies an alternating current voltage of an alternating current power supply. A parallel converter comprises converters that correspond to phases and that are connected in parallel to an output terminal of the rectification circuit. Each converter comprising a reactor, a switching circuit that is connected in series to the reactor and a diode that is connected in series to the reactor. A smoothing capacitor is connected to an output terminal of the parallel converter. A control circuit generates pulse signals corresponding to phases based on an error voltage between an output voltage of the smoothing capacitor and a reference voltage and on an output voltage of the rectification circuit, and switches the switching circuits in the converters using the pulse signals. Current detection circuits are provided corresponding to the converters and that detect currents flowing through the switching circuits.

Abstract: A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Abstract: Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (Si3N4), a silicon oxide film that includes silicon oxide (SiO2), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Abstract: In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100° C. below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.

Abstract: One or more embodiments disclose a semiconductor device that includes a trench extending into a drift zone of a semiconductor body from a surface of the semiconductor body in a first direction; a dielectric structure in the trench; a gate electrode in the dielectric structure; a body region of a first conductivity type other than a second conductivity type of the drift zone; and an auxiliary structure of the second conductivity type adjoining the drift zone, the body region and the dielectric structure, wherein the auxiliary structure extends outwardly from the trench in a second direction, the second direction orthogonal to the first direction, and in the second direction, a first length of the auxiliary structure is larger than a second length of the trench.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: Circuits and devices are described that provide power to appliances and other devices via a power correction circuit and an LLC converter, which may for example include resonant series converters and flyback converters. The circuits and devices economize on board space, part size and power start up time by separately powering up the controller circuit portion prior to powering up the LLC converter.

Abstract: One or more embodiments of current source circuits may include: a first current source that generates a first current dependent on a threshold value of a MOSFET; a second current source that generates a second current dependent on a voltage in a forward direction of a p-n junction; a first resistor that produces a first voltage based on the first current and the second current; a second resistor that produces a second voltage based on the second current; and an output MOSFET that produces an output current based on a sum of the first voltage and the second voltage.

Abstract: A first switch and a second switch connected in series to both terminals of a DC power source. A signal generation circuit generates a feedback signal based on the DC voltage detected by the voltage detection circuit, and outputs the feedback signal, the feedback signal for turning the first and second switches on and off. A burst oscillation circuit that generates a burst oscillation signal based on a feedback signal and turns the first switch element and the second switch element on and off based on the burst oscillation signal when the standby state is detected. The burst oscillation circuit comprises a capacitor and a rapid charge circuit. When this device returns from standby state to normal state, the rapid charging circuit charges the capacitor after the feedback signal exceeds the cancellation threshold voltage.

Abstract: A burst oscillation circuit operates switches in a burst oscillation mode based on a feedback signal. A first burst operation cancellation threshold voltage comparator compares a first burst operation cancellation threshold voltage set higher than a voltage of the feedback signal that a load current reaches the standby threshold and a voltage of the feedback signal, and outputs a first output signal. A second burst operation cancellation threshold voltage comparator compares a second burst operation cancellation threshold voltage set lower than the voltage of the feedback signal that the load current reaches the standby threshold and higher than a voltage of the feedback signal during a non-oscillation period of the burst oscillation operation and the voltage of the feedback signal and outputs a second output signal. A standby cancellation circuit generates a standby cancel signal to cancel the standby state based on the first and second output signal.

Abstract: An interleaved DC-DC converter according to one or more embodiments includes a control circuit and N boost converters that are connected in parallel. The control circuit includes: an output voltage detection circuit that compares a detected voltage with a reference voltage, and outputs a comparison result as an error signal; N PWM generators that respectively generate pulses that on/off drive switching elements of the N converters; N current error amplifiers that compare current signals detected by respective current detectors with the error signal, and that outputs comparison results as feedback signals to the respective PWM generators; a differential detector that detects a difference between one feedback signal and another feedback signal for each of the feedback signals; and a latch circuit that stops all switching operations of the N converters when the differential detector detects that any one of the differences is a predetermined threshold value or more.

Abstract: Circuits and devices are described that provide power to appliances and other devices via a power correction circuit and an LLC converter, which may for example include resonant series converters and flyback converters. The circuits and devices economize on board space, part size and power start up time by separately powering up the controller circuit portion prior to powering up the LLC converter.

Abstract: A control circuit of a switching power-supply device that converts a first DC voltage supplied from an input power source to a second DC voltage, includes: a first A/D converter that converts the second DC voltage into a first digital value, in response to a sampling clock depending on a first sampling clock and a second sampling clock; a control signal generation unit that generates a control signal for controlling on-and-off of the switching element based on of a difference between the first digital value and a target value; a regeneration completion sensing unit that senses completion of regeneration of the inductor and outputs a regeneration completion signal; and a sampling clock generation unit that: generates the first sampling clock, in response to the control signal to turn on the switching element, and generates the second sampling clock, in response to the regeneration completion signal.

Abstract: A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

Abstract: Provided is a semiconductor device that is good in switching characteristics and high in breakdown voltage in off state. The geometry of a corner of a trench T is provided with a rounded shape (a curved face geometry having a radius of curvature of R1) under the depth P1. In addition, assuming the thickness of a gate oxide film 21 on the side wall of the trench T in a right-left direction in figure is T0, and the thickness of the gate oxide film 21 in the central portion of the bottom part of the trench T in a vertical direction in figure is T1, the gate oxide film 21 is formed so as to meet T1>T0. The gate oxide film 21 is provided with a rounded shape (having a radius of curvature of R2) under the depth P2. In addition, the expression R2?R1 is met.

Abstract: A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction diode, which is formed in a part of a region between the transistors, wherein the transistor includes: a trench, which is formed inwardly from a front surface; and a conductive region in the trench; wherein a first trench is a trench of the transistor which is not adjacent to the PN junction diode, and a second trench is a trench of one or both of the two transistors adjacent to the PN junction diode, wherein a bottom surface of the first trench is formed in a semiconductor region of a first impurity concentration, and wherein a bottom surface of the second trench is formed in a semiconductor region of a second impurity concentration, which is higher than the first impurity concentration.

Abstract: Apparatus and associated methods relate to a bonding pad structure for a trench-based semiconductor device. The bonding pad structure reduces a peak magnitude of the electric field between a metal bonding pad and the underlying semiconductor. The bonding pad structure includes a plurality of trenches vertically extending from a top surface of a semiconductor. Each of the plurality of trenches has dielectric sidewalls and a dielectric bottom, the dielectric sidewalls and dielectric bottom electrically isolating a conductive core within each of the trenches from a region of semiconductor outside of and adjacent to each of the plurality of trenches. The bonding pad structure includes a metal bonding pad disposed above the plurality of trenches, the metal bonding pad electrically isolated from the region of semiconductor outside of the trenches. The conductive core can be biased to reduce the magnitude of the field between adjacent trenches.

Abstract: The invention includes: charging/discharging devices including storage batteries and having a grid-connected function to perform charging/discharging operations on an electric power system and an islanded-operation function to supply the electric power system with a constant-voltage constant-frequency electric power; a monitor detects an electric power state of the charging/discharging device and to transmit detection output to the charging/discharging device; and a switching unit connects and disconnects commercial power source to and from electric power system. When a commercial power source is normal, the switching unit connects the commercial power source to the electric power system and charging/discharging devices establish a grid connection.

Abstract: An ignition transformer includes a primary winding and a secondary winding and are electromagnetically coupled to each other. A battery is connected to a first end of the primary winding. A switch connected to a second end of the primary winding is turned on or off in response to an ignition signal. A saturable reactor includes a saturable core and includes a first winding, and a second winding the first and second windings electromagnetically coupled to each other. A first end of the first winding is connected to a first end of the second winding. A second end of the first winding is connected to the ignition plug. A reset circuit applies a reset voltage to the first and second ends of the second winding. The reset voltage is a voltage to switch a magnetization status of the saturable core between a saturated state and an unsaturated state.