Abstract: A pivotal lever has a first therapeutic member and a second therapeutic member positioned below the first member, for the members to grip and knead the shoulder of the person to be massaged as by the fingers of the acupressurist. A massage unit 20 comprises a pair of left and right pivotal levers 100 pivotally movably arranged on a chassis 21, and a first therapeutic member 200 and a second therapeutic member 300 arranged on each of the pivotal levers 100 and movable toward and away from each other. The first and second therapeutic members 200, 300 have motion conversion 400 coupled thereto for converting the pivotal movement of the pivotal lever 100 into the movement of the first and second therapeutic members 200, 300 toward and away from each other.

Abstract: A memory capable of reducing the memory cell size is provided. In this memory, a first gate electrode of a first selection transistor and a second gate electrode of a second selection transistor are provided integrally with a word line, and arranged to obliquely extend with respect to the longitudinal direction of a first impurity region on a region formed with memory cells and to intersect with the first impurity region on regions formed with the first selection transistor and the second selection transistor in plan view.

Abstract: An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitting layer and is smaller than the bandgap of the p-type cladding layer.

Abstract: Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the conducting impurity regions. Thus, the leakage of high-frequency signals can be suppressed. In particular, in a case where a floating conducting region is placed between a peripheral impurity region of a common input terminal pad and a resistor in a switch circuit device, it is possible to suppress the leakage of high-frequency signals from an input terminal to control terminals which become high frequency GND and to suppress an increase in insertion loss.

Abstract: A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: Various bus lines are disposed in the same layer as the layer of the pixel electrode. The peripheral driving circuit is configured by using a layer below the pixel electrode, including the layer of the gate electrode, the data line and the active layer of a TFT. The HVDD bus line is superimposed on the H scanner, the VSS bus line on the HSW circuit and the V scanner, the pre-charge data bus line on the PSW circuit, and the VVDD bus line on the V scanner. This increases the flexibility of the disposition of the bus lines for supplying the source voltages to the peripheral driving circuit, leading to the reduction of the framing area.

Abstract: Various bus lines are disposed in the same layer as the layer of the pixel electrode. The peripheral driving circuit is configured by using a layer below the pixel electrode, including the layer of the gate electrode, the data line and the active layer of a TFT. The HVDD bus line is superimposed on the H scanner, the VSS bus line on the HSW circuit and the V scanner, the pre-charge data bus line on the PSW circuit, and the VVDD bus line on the V scanner. This increases the flexibility of the disposition of the bus lines for supplying the source voltages to the peripheral driving circuit, leading to the reduction of the framing area.

Abstract: Various conditions such as the power of a pulse beam for recording emitted from an optical head to a magneto-optical recording medium, the power of continuous light in reproduction, the intensity of the magnetic field applied from a magnetic head, the phase difference between the magnetic field applied from the magnetic head and the pulse beam emitted from the optical head, and the equalizer coefficient of an equalizer are optimized based on the error rate of a reproduced signal by actually recording a signal to a magneto-optical recording medium and reproducing the recorded signal. A signal is recorded and/or reproduced to/from a magneto-optical recording medium according to the optimized conditions. A control circuit provides control of a servo circuit, an equalizer, a laser drive circuit and a magnetic head drive circuit.

Abstract: In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al0.3Ga0.7N and has an electron concentration of 1×1017 cm−3 and an Al composition greater than 0.1, and the surface thereof is terminated with N.

Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: The display device of this invention has a pixel element electrode 80, a plurality of drain signal lines 61 for supplying the digital image signals D0- D2, a plurality of capacitance elements C0-C2 with weighed capacitance value corresponding to the digital image signals D0-D2, a refresh transistor RT for initializing the voltage of the pixel element electrode 80 to the voltage Vsc, and charge transfer transistors TT0-TT2 for supplying the charge accumulated in the capacitance elements C0-C2 to the pixel element electrode 80. An image is displayed by supplying the analog image signal corresponding to the digital image signals D0-D2 to the pixel element electrode 80. The configuration of the peripheral circuits of the pixel element portion is simplified, leading to the reduction of the framing area of the panel.

Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: A target selection object is selected by providing N (N is an integer of not less than two) keys used for pointing, dividing a screen into N areas in correspondence with the N keys and displaying the N areas such that they can be distinguished, enlarging, when the key corresponding to the area where the target selection object exists is operated by a user, only the area corresponding to the key to the size of one screen and displaying the screen obtained by the enlargement, and dividing the screen into N areas in correspondence with an arrangement of the N keys and displaying the N areas such that they can be distinguished, and performing the same processing every time a key operation is performed by the user.

Abstract: Information is not written in through channel dope, but through the difference of ions implanted into the impurity region of a semiconductor layer. Each memory element has a pair of the thin film transistors. The memory element with “1” written on it and the memory element with “0” written on it are differentiated based on whether the thin film transistors of the pair belongs to the same conductivity type or different conductivity types. Also, when the write-in impurity region is formed adjacent the impurity region, it is possible to differentiate the memory elements based on whether a diode connected to the thin film transistor in series is formed or not. Since these elements can be produced without the ion-implantation through the gate electrode, it is possible to build a mask ROM on the glass substrate. Also, it is possible to differentiate the memory elements based on whether wiring contact holes are formed in the thin film transistor or not.

Abstract: A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: This invention is directed to the active matrix display device with an imaging speed rapid enough for the moving image display and the small power consumption. The selector makes the switch between the moving image mode, where the image signal consecutively inputted is consecutively displayed after the certain processing is performed by the data processing unit and the still image mode, where the display is made based on the image signal stored in the frame memory. The messy display upon the switching between the modes can be prevented by differentiating the switching timing of the still to moving image mode from that of the moving to still image mode, improving the display quality.

Abstract: A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: A reproducing apparatus reproduces a signal recorded in a magneto-optical disk. The magneto-optical disk includes a layered structure having a recording layer, an intermediate layer and a reproducing layer. Laser light is illuminated from an optical head to the magneto-optical disk in such an intensity that no magnetic domain is transferred from the recording layer to the reproducing layer only by the laser light. In this state, alternating magnetic field is applied through a magnetic head to the magneto-optical disk, thereby concurrently causing transfer and expansion of a magnetic domain to the reproducing layer. As a result, transfer of the magnetic domain is effected with expansion.

Abstract: A belt-shaped spongelike organic high polymer sheet is subjected to stretching forces in the longitudinal and lateral directions so as to transform the approximately spindle-shaped organic high polymer units which compose the organic high polymer sheet. After this, a metal is put into voids inside the organic high polymer sheet. Then, the organic high polymer is eliminated by baking it, and the metal is sintered. As a result, a spongelike metal substrate is completed whose carbon content is 0.5% by weight or less and whose metallic lattices have a longer length/shorter length ratio of 1.7 or below. The spongelike metal substrate is filled with electrode active material to form an electrode, which is combined with a counter electrode and a separator, and coiled in the direction of the longer lengths of the lattices to form a coiled electrode assembly. The electrode assembly is used to manufacture an alkali storage cell.