Abstract: A method of preparing at least one layer of a multilayer dielectric (MLD) film stack by producing a sol from a mixture that comprises an epoxide and at least one precursor to a metal oxide, depositing the sol on a substrate, and preparing a metal oxide layer from the deposited sol. The mixture can also include one or any combination of a solvent, water, a precursor to a glassforming oxide, at least one modifier, a cosolvent, or a porogen. Two or more layers of the film stack can be prepared in similar fashion using the same or different sols.
Abstract: A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester hydrolysis, an amphiphilic block copolymer surfactant, and a nonmetallic catalyst that reduces dielectric constant in the produced material. The composition can further include a metallic ion at a lower parts-per-million concentration than the nonmetallic catalyst, and/or the composition can further include a cosolvent. A method of preparing a thin film on a substrate using the sol composition is also provided.
Abstract: A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester hydrolysis, an amphiphilic block copolymer surfactant, and a nonmetallic catalyst that reduces dielectric constant in the produced material. The composition can further include a metallic ion at a lower parts-per-million concentration than the nonmetallic catalyst, and/or the composition can further include a cosolvent. A method of preparing a thin film on a substrate using the sol composition is also provided.
Abstract: A spin-on dielectric of novel composition formed as a sol comprising an a source of silicon such as an orthosilicate ester, alone or in combination with an alkylated orthosilicate ester, a polar solvent, water, an acid catalyst, which may be a strong acid catalyst, and an amphiphilic block copolymer surfactant, optionally including an organic acid, a co-solvent and/or a reactive solvent. Also provided is a method of formulating the sol, a film made from the spin-on dielectric that has desirable electrical and mechanical properties, methods for treating the film described to optimize the film's electrical and mechanical performance, and methods for depositing the film onto silicon, steel or other surfaces.
Abstract: A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
Type:
Grant
Filed:
March 6, 2008
Date of Patent:
July 9, 2013
Assignee:
SBA Materials, Inc.
Inventors:
Shyama P. Mukherjee, Mark L. F. Phillips, Travis P. S. Thoms
Abstract: The invention comprises the design, synthesis, and characterization of mesostructured silica/block copolymer composite monoliths as controlled release systems. The controlled release function is based on the formation of mesostructured silica/block copolymer architectures via surfactant-templated sol-gel processing. Multi-layered or gradient monoliths are produced by layer-by-layer sol-gel processing to provide pulsed and programmed release characteristics. A simple, rapid route to prepare combinatorial compositional monolith libraries provides high-throughput synthesis and rapid screening of the release characteristics of the monoliths.