Abstract: The object of the invention is a process for P-type boron doping of silicon wafers placed on a support in the chamber of a furnace of which one end comprises a wall in which means for introducing reactive gases and a gas carrying a boron precursor in gaseous form are located, whereby said process comprises the stages that consist in: a) In the chamber, reacting the reactive gases with boron trichloride BCl3 that is diluted in the carrier gas at a pressure of between 1 kPa and 30 kPa, and a temperature of between 800° C. and 1100° C., for forming a boron oxide B2O3 glass layer, b) Carrying out the diffusion of atomic boron in silicon under an N2+O2 atmosphere at a pressure of between 1 kPa and 30 kPa. A furnace designed for the implementation of said doping process as well as its applications—the manufacturing of large boron-doped silicon slices, in particular for photovoltaic applications—is also claimed.

Abstract: A process for P-type boron doping of silicon wafers placed on a support in the chamber of a furnace of whose one end includes a wall in which element for introducing reactive gases and a carrier gas carrying a boron precursor in gaseous form are located, whereby the process includes the following stages: a) reacting in the chamber, the reactive gases with boron trichloride BCl3 that is diluted in the carrier gas at a pressure of between 1 kPa and 30 kPa, and a temperature of between 800° C. and 1100° C., to form a boron oxide B2O3 glass layer; and b) carrying out the diffusion of atomic boron in silicon under an N2+O2 atmosphere at a pressure of between 1 kPa and 30 kPa. A furnace designed for implementing the doping process, and the manufacturing of large boron-doped silicon slices, in particular for photovoltaic applications are also claimed.

Abstract: Method and device for doping or diffusion, or oxidation of silicon wafers (4), the wafers being introduced into the chamber (2) of an oven (1) wherein is introduced at least a gas for performing the doping or diffusion or oxidation process. The method comprises simultaneously with the introduction and passage of gas into the chamber (2) of the oven (1), continuously subjecting the latter to a depression of constant value. The device comprises an oven (1) provided with a chamber (2) wherein are introduced the wafers, the oven including at least an inlet tube (5a, 5b, 5c) for introducing at least a gas into the chamber (2) to carry out the processes and at least an outlet tube (6) for extracting the gas whereto is connected a suction unit (7) for generating in the chamber (2) a constant and controlled depression.

Abstract: The convertible pad support can receive at least two different types of pads of different dimensions. The support includes a three-dimensional structure defining a storage volume wherein the pads are disposed. The structure includes two lateral flanks which are firmly connected by two fixed arms and receives at least one additional arm which can be placed opposite the storage volume. The structure maintains the pads inside the storage volume with the aid of the other arms whereby the normal distance between the additional arm and the geometric longitudinal axis of one of the fixed arms can be adjusted in order to adapt support to the dimensions of the pads to be received.

Abstract: A device for holding a wafer, an electronic component comprises a system for transporting without deformation a wafer of electronic components. The device also enables the transport by one or the other of the passive or active faces. The device comprises a planar and thin rigid support having a controllable temperature and at least an electrode consisting of (N+1) elements, confined between two sheets of insulating material. The support provides a protrusion-free surface for gripping the wafer, and electrostatic elements for positive retention of the wafer induces a gripping power of the latter distributed over the entire support. The U-shaped support is borne by the electrical bond of the electrode with a remote (adjustable, AC or DC, mono-multipolar) power source. The gripping surface of the device is planar and protrusion-free whatever the geometry of the support used.