Patents Assigned to Semiconductor Energey Laboratory Co., Ltd.
  • Semiconductor device
    Patent number: 7034381
    Abstract: A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: April 25, 2006
    Assignee: Semiconductor Energey Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki