Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.

Abstract: A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.

Abstract: A display device that has a function of emitting visible light and infrared light and a function of detecting light. The display device is a display device including a first light-emitting device, a second light-emitting device, and a light-receiving device, in a display portion. The first light-emitting device includes a first pixel electrode, a first optical adjustment layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device includes a second pixel electrode, a second optical adjustment layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The light-receiving device includes a third pixel electrode, an active layer, and the common electrode. The active layer includes an organic compound. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer.

Abstract: A semiconductor device in which energy required for data transfer between an arithmetic device and a memory is reduced is provided. The semiconductor device includes a peripheral circuit and a memory cell array. The peripheral circuit has a function of a driver circuit and a control circuit for the memory cell array, and an arithmetic function. The peripheral circuit includes a sense amplifier circuit and an arithmetic circuit, and the memory cell array includes a memory cell and a bit line. The sense amplifier circuit has a function of determining whether the bit line is at a high level or a low level, and outputs the result to the arithmetic circuit. The arithmetic circuit has a function of performing a product-sum operation, the result of which is output from the semiconductor device.

Abstract: A light-emitting element including a fluorescent material as a light-emitting material and having high emission efficiency is provided. The light-emitting element includes a pair of electrodes and an EL layer provided between the pair of electrodes. The EL layer includes a host material and a guest material. The host material is capable of exhibiting thermally activated delayed fluorescence at room temperature. The guest material is capable of exhibiting fluorescence. The second triplet excitation energy level of the guest material is higher than or equal to the lowest singlet excitation energy level of the guest material.

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract: In a semiconductor device and a shift register, low noise is caused in a non-selection period and a transistor is not always on. First to fourth transistors are provided. One of a source and a drain of the first transistor is connected to a first wire, the other of the source and the drain thereof is connected to a gate electrode of the second transistor, and a gate electrode thereof is connected to a fifth wire. One of a source and a drain of the second transistor is connected to a third wire and the other of the source and the drain thereof is connected to a sixth wire.

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: A display apparatus capable of performing authentication in a short time is provided. The display apparatus includes a first display portion where first pixels are arranged in a matrix, a second display portion where second pixels are arranged in a matrix, first and second row driver circuits, and a control circuit. Each of the first and the second pixels includes a light-receiving element. The first and the second pixels each have a function of acquiring imaging data by using the light-receiving element. The first and the second row driver circuits each have a function of selecting the first and the second pixels which read out the imaging data. The control circuit has a function of sequentially driving the first and the second row driver circuits in a first mode, and has a function of driving one of the first and the second row driver circuits on the basis of the imaging data in the second mode.

Abstract: An electronic device with a high security level is provided. The electronic device includes a control portion, a memory portion, and a display portion. The display portion has a function of displaying a first icon and a function of obtaining first fingerprint data in a display region of the first icon. The memory portion has a function of retaining second fingerprint data. The control portion has a function of comparing the first fingerprint data with the second fingerprint data; a function of executing first processing associated with the first icon in the case where the first fingerprint data and the second fingerprint data match; and a function of executing second processing in the case where the first fingerprint data and the second fingerprint data do not match.

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

Abstract: A display apparatus with a driver circuit having redundancy is provided. The display apparatus includes a first layer and a second layer positioned above the first layer. The first layer includes a first driver circuit and a second driver circuit. The second layer includes a first pixel region and a second pixel region. The first pixel region includes a first pixel circuit and the second pixel region includes a second pixel circuit. The first pixel region includes a region overlapping with the first circuit and the second pixel region includes a region overlapping with the second circuit. The first pixel circuit is electrically connected to the first driver circuit through a first wiring, the second pixel circuit is electrically connected to the second driver circuit through a second wiring, and the first wiring is electrically connected to the second wiring through a switch.

Abstract: To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other, and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

Abstract: Since power source voltages are different depending on circuits used for devices, a circuit for outputting at least two or more power sources is additionally prepared. An object is to unify outputs of the power source voltages. A transistor using an oxide semiconductor is provided in such a manner that electrical charge is retained in a node where the transistor and a capacitor are electrically connected to each other, a reset signal is applied to a gate of the transistor to switch the states of the transistor from off to on, and the node is reset when the transistor is on. A circuit configuration that generates and utilizes a potential higher than or equal to a potential of a single power source can be achieved.

Abstract: A flexible semiconductor device including a light-emitting element and a sensor element is provided. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed over a flexible substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. Light emitted from the light-emitting element has a peak wavelength. A range of wavelength sensed by the sensor element includes the peak wavelength. A semiconductor layer of the first transistor and a semiconductor layer of the second transistor include the same element. A pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and a function of blocking diffusion light to the sensor element.

Abstract: Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Abstract: An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.

Abstract: A semiconductor device includes a first transistor one of a source and a drain of which is electrically connected to a first wiring for reading data; a second transistor one of a source and a drain of which is electrically connected to a gate of the first transistor and the other of the source and the drain of which is electrically connected to a second wiring for writing the data; and a third transistor one of a source and a drain of which is electrically connected to the gate of the first transistor and the other of the source and the drain of which is electrically connected to a capacitor for retaining electric charge corresponding to the data, and the third transistor includes a metal oxide in a channel formation region.