Patents Assigned to Semiconductor Energy Laboratory, Ltd.
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Patent number: 10340739Abstract: A novel power receiving device and a novel power transmission device are provided. Power feeding and communication are performed using a magnetic resonance method. Specifically, in one embodiment of the present invention, power feeding is performed by generating a second high-frequency voltage based on a first high-frequency voltage induced in a resonant coil and communication is performed by modulating amplitude of the first high-frequency voltage induced in the resonant coil. Thus, it is possible to perform communication and power feeding based on data obtained by the communication in pseudo-parallel.Type: GrantFiled: November 18, 2016Date of Patent: July 2, 2019Assignee: Semiconductor Energy Laboratory., Ltd.Inventor: Koichiro Kamata
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Publication number: 20130285464Abstract: To provide a power feeding system and the like with which charging can be performed without a decrease in the power supply efficiency. To provide a power feeding system and the like with which can offer a power feeding service which is efficient to both a power feeding user and a power feeding provider. The power transmission state in each of power transmitting portions is monitored, the power transmitting portion having the highest power transmission efficiency is selected based on positional advantage, and the power transmitting resonance coil included in the selected power transmitting portion is kept at a first resonance frequency, whereby power transmission continues. The resonance frequency of the power transmitting resonance coil included in the non-selected power transmitting portion (the number of the non-selected power transmitting portions may be plural) is set to a second resonance frequency, whereby power transmission is stopped.Type: ApplicationFiled: April 17, 2013Publication date: October 31, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY., LTD.Inventors: Misako Miwa, Koichiro Kamata, Yutaka Shionoiri, Shuhei Maeda
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Patent number: 8455916Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are seated by the first sealing material and the second sealing material.Type: GrantFiled: July 22, 2011Date of Patent: June 4, 2013Assignee: Semiconductor Energy Laboratory, Ltd.Inventors: Takeshi Nishi, Yasuo Nakamura
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Publication number: 20120237822Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.Type: ApplicationFiled: March 14, 2012Publication date: September 20, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY., LTD.Inventors: Tomoya Futamura, Tamae Moriwaka, Takahiro Kawakami, Junpei Momo, Nobuhiro Inoue
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Publication number: 20080284328Abstract: It is an object of the present invention to provide a material which is excellent in a hole injecting property and a hole transporting property, and to provide a light emitting element and a light emitting device using a material which is excellent in a hole injecting property and a hole transporting property. The present invention provides a carbazol derivative represented by a general formula (1). The carbazol derivative according to the present invention is excellent in the hole injecting property. By using the carbazol derivative according to the present invention as a hole injecting material for a hole injecting layer of a light emitting element, a driving voltage can be reduced. In addition, a lower driving voltage, improvement of the luminous efficiency, a longer life time, and higher reliability can be realized by applying the material to a light emitting element or a light emitting device.Type: ApplicationFiled: October 14, 2005Publication date: November 20, 2008Applicant: Semiconductor Energy Laboratory, Ltd.Inventors: Harue Nakashima, Sachiko Kawakami, Daisuke Kumaki
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Publication number: 20080088614Abstract: A video correction circuit of the invention includes an detection unit for detecting the cumulative light-emission frequency data on each pixel by sampling video data supplied to a display device having a plurality of pixels; a cumulative data storage unit for storing the cumulative light-emission frequency data on each pixel; an adder for adding the cumulative light-emission frequency data on each pixel detected by the detection unit to the cumulative light-emission frequency data on each pixel stored in the cumulative data storage unit, thereby writing the result to the cumulative data storage unit as new cumulative light-emission frequency data; and a correction unit for correcting the video data based on the cumulative light-emission frequency data stored in the cumulative data storage unit, thereby outputting the corrected video data to the pixel portion. The pixels are provided with light-emitting elements of a plurality of colors.Type: ApplicationFiled: September 21, 2007Publication date: April 17, 2008Applicant: Semiconductor Energy Laboratory., Ltd.Inventor: Tadafumi Ozaki
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Publication number: 20070275506Abstract: It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.Type: ApplicationFiled: May 10, 2007Publication date: November 29, 2007Applicant: Semiconductor Energy Laboratory., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Yuugo Goto, Hideaki Kuwabara
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Publication number: 20070007529Abstract: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 ?m or less in width, and allowing the metal to react with silicon. A high performance TFT can be realized.Type: ApplicationFiled: September 18, 2006Publication date: January 11, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY LTD.Inventors: Yasuhiko Takemura, Hongyong Zhang, Satoshi Teramoto
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Publication number: 20060189105Abstract: A data holding control signal for each data line is supplied to a plurality of source followers that are connected together in parallel. The parallel-connected source followers are a combination of at least one first follower that is illuminated with laser light only once and at least one second follower that is illuminated twice. A width of the laser light illumination for crystallization is equal to a pitch of the source followers multiplied by an integer that is not less than 3.Type: ApplicationFiled: April 6, 2006Publication date: August 24, 2006Applicant: Semiconductor Energy Laboratory, Ltd.Inventors: Jun Koyama, Yuji Kawasaki
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Publication number: 20040075092Abstract: It is an object of the present invention to form a TFT which is required to have a high pressure resistant characteristic as well as to lower an off-current, a TFT which is required to have a high pressure resistant characteristic as well as to raise an on-current, and a TFT in which a short channel structure and the decline in the threshold voltage arising therefrom are attached importance to, on one and the same substrate.Type: ApplicationFiled: October 3, 2003Publication date: April 22, 2004Applicant: Semiconductor Energy Laboratory., Ltd.Inventor: Tatsuya Arao
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Publication number: 20040065902Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability.Type: ApplicationFiled: October 6, 2003Publication date: April 8, 2004Applicant: SEMICONDUCTOR ENERGY LABORATORY., LTD.Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
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Patent number: 6331457Abstract: A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.Type: GrantFiled: March 13, 2000Date of Patent: December 18, 2001Assignee: Semiconductor Energy Laboratory., Ltd. Co.Inventors: Shunpei Yamazaki, Hisashi Ohtani, Akiharu Miyanaga, Satoshi Teramoto
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Patent number: 5994172Abstract: A metal element density is lowered in a crystalline silicon film obtained by four hour treatment at about 550.degree. C. by using a catalyst metal which accelerates crystallization. At the same time, a crystalline silicon film can be obtained which has a high crystallinity. For this purpose, extremely oxide film 13 is formed on an amorphous silicon film formed on this glass substrate in the beginning. An aqueous solution of acetate added with 10 to 200 ppm (need adjustment) of catalyst element like nickel or the like is dripped. This state is held for a predetermined time. Then the spin drying is performed by using a spinner. The film is crystallized by four hour treatment at 550.degree. C. Then a localized nickel component is removed by the fluoric acid treatment. Further, the crystalline silicon film is obtained by laser light irradiation. Then a crystalline silicon film is obtained having a low density of metal element and a small defect density by four hour heat treatment at 550.degree. C.Type: GrantFiled: April 7, 1998Date of Patent: November 30, 1999Assignee: Semiconductor Energy Laboratory., Ltd.Inventors: Hisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
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Patent number: 5728259Abstract: Disclosed herein is a process for fabricating a thin-film semiconductor device which includes (1) a step of etching a silicon film by wet etching or gas etching, the former employing a liquid containing hydrazine or ethylene diamine, the latter employing chlorine fluoride, thereby forming an island-like silicon semiconductor region having inclined edges, and (2) a step of forming thereon a gate insulating film by plasma-free process such as heated CVD. The process yields the island-like silicon region and gate insulating film completely free from plasma-induced damage. This reduces the leakage current between the source and drain (which is due to plasma-induced damage) and prevents the degradation of characteristic properties.Type: GrantFiled: October 19, 1995Date of Patent: March 17, 1998Assignee: Semiconductor Energy Laboratory, Ltd.Inventors: Hideomi Suzawa, Shunpei Yamazaki, Toshiji Hamatani, Yasuhiko Takemura
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Patent number: 4835751Abstract: An improved magneto-optical disc memory with a ferroelectric liquid crystal (FLC) is shown. As FLC a chiral smectic liquid crystal is employed to exhibit a bistability between a pair of substrates which have easy polarization axes normal to each other. Information to be recorded is written on the disc in terms of a binary system by use of the bistability. Reproduction is performed using a polarizing plate and a photodetector.Type: GrantFiled: October 8, 1987Date of Patent: May 30, 1989Assignee: Semiconductor Energy Laboratory, Ltd.Inventor: Shunpei Yamazaki
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Patent number: 4828363Abstract: A liquid crystal device having a plurality of pixels defined on a liquid crystal layer by a plurality of first and second electrodes that are electrically connected to non-linear devices, the first electrode and non-linear devices being provided on the inside of a first substrate, and the second electrodes being provided on the inside of a second substrate. In order to provide a flat underlying surface for the first electrodes while enabling the first electrodes to overly the non-linear devices (and with them the effective areas of the pixels), an insulating layer is provided under the first electrodes immediately adjacent to the non-linear devices.Type: GrantFiled: September 3, 1987Date of Patent: May 9, 1989Assignee: Semiconductor Energy Laboratory, Ltd.Inventor: Shunpei Yamazaki
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Patent number: 4829358Abstract: Apparatus is provided with at least a FET. The FET is formed of a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a insulating layer extending on the side surface of the second semiconductor layer and a conductive layer extending on the insulating layer in opposing relation to the side surface of the second semiconductor layer. In this case, the first, second and third semiconductor layers are formed of a non-single crystal semiconductor doped with a dangling bond neutralizer. The first and third semiconductor layers have the same conductivity type. The second semiconductor layer has a higher resistivity than the first and third semiconductor layers. The first and third semiconductor layers serve as either one of the drain and source and the other of them, respectively. The second semiconductor layer serves as channel region. The insulating layer and the conductive layer serve as gate insulating layer and gate electrode, respectively.Type: GrantFiled: June 9, 1987Date of Patent: May 9, 1989Assignee: Semiconductor Energy Laboratory, Ltd.Inventor: Shunpei Yamazaki
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Patent number: H1683Abstract: A superconducting composition is provided to essentially consist of a superconducting material and Li(lithium), Na(sodium), and K(potassium) mixed in an amount up to 0.2% by weight of of the composition into the superconducting material.Type: GrantFiled: June 7, 1995Date of Patent: October 7, 1997Assignee: Semiconductor Energy Laboratory, Ltd.Inventor: Shunpei Yamazaki