Abstract: A diode has a semiconductor body having a first and a second semiconductor body main side, wherein the semiconductor body has a first semiconductor zone, wherein the semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body, wherein the semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and having a higher doping concentration than the second semiconductor zone, wherein the semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge, wherein the semiconductor body has a cutout proceeding from a planar outer surface of the third semiconductor zone, which forms a surface region of the second semiconductor bod

Abstract: A circuit configuration for controlling a power semiconductor device has a first circuit carrier and a second circuit carrier arranged parallel to and spaced apart from the first, and having a plastic molded body arranged in an intermediate space between the first and second circuit carrier, wherein the first circuit carrier has a first conductor track with a first contact point, which can be implemented in particular as a contact pad or as a contact receptacle, which is arranged on a main side of the first circuit carrier facing the plastic molded body, wherein the second circuit carrier has a second conductor track with a second contact point, which is arranged on a main side of the second circuit carrier facing the plastic molded body, wherein the plastic molded body has a first holder for a first component with a first and a second contact device, and wherein the first contact device is electrically conductively connected to the first contact point and the second contact device is electrically conductivel

Abstract: The invention provides a pressure sintering method including: a)providing a sintered component arrangement with a workpiece carrier having recesses, with a substrate resting on a main surface of the workpiece carrier, wherein a sintering material to be sintered is arranged between the power semiconductor components and the substrate, a first power semiconductor component and a first region of the substrate arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a first recess of the workpiece carrier, and a second power semiconductor component and a second region of the substrate are arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a second recess of the workpiece carrier and a step of b) pressurizing the power semiconductor components and applying a temperature treatment.

Abstract: The invention relates to a power electronic switching device having a substrate, which has a non-conductive insulation layer on which at least one first conductor track 40 and at least one second conductor track 50 are applied. The first conductor track 40 is assigned an electrical DC voltage potential DC+ of the power electronic switching device and the one second conductor track 50 is assigned an electrical AC voltage potential AC of the power electronic switching device. At three first partial power switches are arranged on the first conductor track. At least three second partial power switches are arranged on the second conductor track. The at least three first partial power switches are connected electrically in parallel with each other to form a first parallel circuit and the at least three second partial power switches are electrically connected in parallel with each other to form a second parallel circuit.

Abstract: A control device for a power semiconductor switch, includes an actuating device, a first current path, a second current path, which connects the second output of the actuating device to a circuit node of the control device in an electrically conductive manner, wherein the second current path incorporates an electrical switching off resistor which is electrically connected in-circuit between a second output of the actuating device and the circuit node of the control device, a third current path, which connects the circuit node of the control device to a control device terminal of the control device in an electrically conductive manner, and an switching off acceleration circuit, which is electrically connected in parallel with the switching off resistor, comprising a diode, an electrical resistor, and a capacitor which is electrically connected in parallel with said resistor, wherein the cathode of the diode is connected to a second electrical terminal of the capacitor in an electrically conductive manner, and

Abstract: A method for producing a power electronics system having a cooling device, a switching device, a terminal device, a capacitor device and a control device includes the following production steps: providing a cooling device with a plurality of first and second positioning cutouts; providing the switching device with a substrate and a first mounting device, which has first positioning devices; providing the terminal device, which is completely independent of the switching device, i.e. forms a dedicated component part or a dedicated assembly, with a second mounting device, which has second positioning devices; arranging the switching device on the cooling device, wherein the first positioning devices are arranged in the respectively assigned first positioning cutouts; arranging the terminal device on the cooling device, wherein the respective second positioning devices are arranged in the assigned second positioning cutouts; arranging the capacitor device.

Abstract: A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.

Abstract: The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.

Abstract: A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

Abstract: A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal.

Abstract: A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding.

Abstract: The invention presents a power electronic arrangement comprising a power electronic switching device, a printed circuit board for carrying control signals for driving the power electronic switching device, a housing which covers the printed circuit board, a communication device which is arranged on the printed circuit board and is accessible through a recess in the housing, and comprising a sealing device, wherein the sealing device has a sealing section which rests in a sealing manner on a first sealing face of the communication device, and wherein the sealing device has a first and second sealing lip which are each arranged circumferentially around and at a distance from the communication device, wherein the two sealing lips are connected to one another by a web and both rest on a second sealing face of the printed circuit board, and wherein the housing has a wall-like pressure device which presses on the web and in this way the first sealing lip bears against that side of the pressure device which faces th

Abstract: A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner.

Abstract: A power electronics method and assembly produced by the method. The assembly has a substrate, having a power semiconductor element, and an adhesion layer disposed therebetween, wherein the substrate has a first surface that faces a power semiconductor element, a power semiconductor element has a third surface that faces the substrate, the adhesion layer has a second surface which, preferably across the full area, contacts the third surface and has a first consistent surface contour having a first roughness, and wherein a fourth surface of the power semiconductor element that is opposite the third surface has a second surface contour having a second roughness, said second surface contour following the first surface contour.

Abstract: A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding.

Abstract: A power semiconductor device comprises a substrate; and power semiconductor components disposed on and connected thereto. The device includes a housing part with a housing wall having a first cutout. The device has, for making electrical contact therewith, a unitary load connection element which passes through the first cutout in an X direction, is electrically conductive, and has an outer connection section disposed outside the housing part and an inner connection section disposed within the housing part. A first bush which has an internal thread running in the X direction is rotationally fixed and movable in the X direction in the housing wall. The first outer connection section has a second cutout aligned with the first bush. The load connection element has a first holding element disposed near the first cutout, the holding element engaging in a groove in the housing wall which runs perpendicular to the X direction.

Abstract: A switching device has a substrate and a power semiconductor component, comprising a connection device and a pressure device wherein the substrate has tracks electrically insulated from one another. The power semiconductor component is on one of the tracks with a first main surface and is conductively connected thereto. The device is embodied as a film composite having a conductive film and an insulating film that forms a first and a second main surface. The switching device is connected internally in a circuit-conforming manner by the connection device and a contact area of the connection device is connected to a first contact area of one of the tracks in a force-locking and electrically conductive manner. There is a pressure body projecting to the substrate and pressing onto a first section of the second main surface of the film composite.

Abstract: A submodule comprising: a substrate, a power semiconductor component, a connection device, a terminal device and an insulating body. The substrate has conductor tracks electrically insulated from one another, and the component is electrically conductively connected to a track. The connection device is a film composite with a first surface facing the component and the substrate and an opposed second surface. The insulating body has: a first partial body, connected to an edge of the substrate, a first cutout for a terminal, a second partial body, embodied as a pressure body and a second cutout, with a pressure element projecting therefrom. The second partial body is movable relative to the first partial body in the direction of the substrate to press with the pressure element onto a section of the second surface. The section is within the area of the component in projection along the direction of the normal thereto.

Abstract: The invention relates to a power semiconductor device with a substrate and an electrically conductive DC voltage bus bar system and a capacitor connected to the bus bar system, wherein the power semiconductor device has, for securing the capacitor, a capacitor securing apparatus comprising a receptacle device for receiving the capacitor, in which at least part of the capacitor is arranged. Electrically conductive bus bar system terminal elements are electrically connected thereto and run in the direction of the substrate. An elastic first deformation element is materially bonded to the capacitor securing apparatus and is formed from an elastomer is arranged on the side of the capacitor securing apparatus facing the DC voltage bus bar system.

Abstract: The invention presents a power electronic arrangement comprising a power electronic switching device, a printed circuit board for carrying control signals for driving the power electronic switching device, a housing which covers the printed circuit board, a communication device which is arranged on the printed circuit board and is accessible through a recess in the housing, and comprising a sealing device, wherein the sealing device has a sealing section which rests in a sealing manner on a first sealing face of the communication device, and wherein the sealing device has a first and second sealing lip which are each arranged circumferentially around and at a distance from the communication device, wherein the two sealing lips are connected to one another by a web and both rest on a second sealing face of the printed circuit board, and wherein the housing has a wall-like pressure device which presses on the web and in this way the first sealing lip bears against that side of the pressure device which faces th