Abstract: A method and apparatus are described for transferring processing structures between first and second processing environments. The apparatus includes a first apparatus compartment configured to provide the first processing environment and a second apparatus compartment configured to provide the second processing environment. The apparatus is preferably configured for transferring wafer structures between the processing environments. The first and second processing environments are coupled together through a transfer passage that is opened and closed in order to isolate the wafer in a small transfer volume between the processing environments. Preferably, the transfer passage is opened and closed with first and second movable tables to create the small volume transfer cavity.

Abstract: A method and apparatus are described for transferring processing structures between first and second processing environments. The apparatus includes a first apparatus compartment configured to provide the first processing environment and a second apparatus compartment configured to provide the second processing environment. The apparatus is preferably configured for transferring wafer structures between the processing environments. The first and second processing environments are coupled together through a transfer passage that is opened and closed in order to isolate the wafer in a small transfer volume between the processing environments. Preferably, the transfer passage is opened and closed with first and second movable tables to create the small volume transfer cavity.

Abstract: A method and apparatus for the continuous melting of silicon for use in semiconductor devices, the method tending to reduce the time and expense associated with conventional melting and forming. The method for melting silicon comprises charging silicon into a melting vessel having a drain therein, heating the silicon in the vessel to a temperature above the melting point of silicon, and allowing the molten silicon to pass through the drain out of the vessel.

Abstract: A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.

Abstract: A method of purifying silicon, in which the silicon is heated to a molten state, contacted with a gas inert to silicon to remove impurities, and thereafter cooled to a solid state.

Abstract: A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.

Abstract: A foraminous sheet of carrier substrate is contacted, by full or partial immersion, with a bath of molten silicon to form a sheet of material in which the foramina are filled with silicon and at least one surface of the sheet is coated with silicon. The coated sheet is suitable for use in forming a photovoltaic cell.

Abstract: A foraminous sheet of carrier substrate is formed by immersing the sheet in a bath of molten silicon. After cooling, the coated sheet is suitable for use in making a photovoltaic cell.

Abstract: A foraminous sheet of carrier substrate is contacted, by full or partial immersion, with a bath of molten silicon to form a sheet of material in which the foramina are filled with silicon and at least one surface of the sheet is coated with silicon. The coated sheet is suitable for use in forming a photovoltaic cell.