Abstract: A method for selectively transferring active components from a source substrate to a destination substrate includes pressing a first stamp having first pillars protruding therefrom against active components on the source substrate to adhere respective primary surfaces of the active components including electrical connections thereon to respective transfer surfaces of the first pillars. A second stamp having second pillars protruding therefrom is pressed against the active components on the first stamp to adhere respective secondary surfaces of the active components to respective transfer surfaces of the second pillars. The transfer surfaces of the second pillars have greater adhesive strength than the first pillars. The second stamp is pressed against a destination substrate to adhere the respective primary surfaces of the active components including the electrical connections thereon to a receiving surface of the destination substrate.

Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer.

Abstract: A solar receiver includes at least two electrically independent photovoltaic cells which are stacked. An inter-cell interface between the photovoltaic cells includes a multi-layer dielectric stack. The multi-layer dielectric stack includes at least two dielectric layers having different refractive indices. Related devices and fabrication methods are also discussed.

Abstract: In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other. Semiconductor materials are selectively epitaxially grown on the seed structures, such that a rate of growth of the semiconductor materials on the seed structures is substantially higher than a rate of growth of the semiconductor materials on regions of the surface. The semiconductor materials assume a lattice constant and directional orientation of crystal lattice that are substantially similar or identical to those of the seed structures. Related devices and methods are also discussed.

Abstract: A concentrator-type photovoltaic module includes a backplane substrate, a plurality of concentrator photovoltaic (CPV) receivers on a surface of the backplane substrate, and concentrating optics positioned over the surface of the backplane substrate and configured to focus on-axis incident light onto the CPV receivers. A plurality of non-concentrator photovoltaic (PV) cells are provided on the surface of the backplane substrate. The PV cells are positioned to receive light that passes off-axis through the concentrating optics. Related devices and methods are also discussed.

Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.

Abstract: A concentrator-type photovoltaic (CPV) device includes a solar cell comprising a substrate including a light receiving surface and a mounting surface opposite the light receiving surface. A conductive through-substrate interconnect having insulated sidewalls extends through the substrate from the mounting surface to the light receiving surface to provide an electrical connection to a conductive terminal on the light receiving surface. A lens support structure is formed on the light receiving surface, and a lens element is provided on the support structure opposite the light receiving surface. The support structure supports and aligns the lens element with the light receiving surface to concentrate incident light thereon. Related fabrication processes are also discussed.

Abstract: A concentrator-type photovoltaic (CPV) receiver includes a solar cell on a substrate. The solar cell includes a light receiving surface having a conductive terminal thereon. A conductive lens support frame is mounted on the substrate and includes an opening therein that exposes the light receiving surface of the solar cell. A lens element is provided on the support frame opposite the light receiving surface of the solar cell. The support frame is electrically connected to the conductive terminal on the light receiving surface and an electrical node on the substrate. The support frame also supports and self-aligns the lens element with the light receiving surface to concentrate incident light thereon. Related fabrication processes are also discussed.

Abstract: A method for selectively transferring active components (22) from a source substrate (20) to a destination substrate (10) includes providing a source substrate with one or more active components located on the source substrate, providing a destination substrate, locating a selectively curable adhesive layer (30) between and adjacent to the destination substrate and the source substrate, selecting one or more active components (22A), selectively curing area(s) (32A) of the adhesive layer corresponding to the selected active components to adhere the selected active components to the destination substrate, and removing the source substrate from the destination substrate leaving the selected active components adhered to the destination substrate in the selected areas.

Abstract: Methods and structures may be used to measure operating temperatures of isolated cells and/or fully interconnected cells inside a Concentrator Photovoltaic (CPV) module. The method may use spectrometers to measure wavelength shifts of a sub-cell electro-luminescence and/or photo-luminescence emission spectrum. A sub-cells' intrinsic bandgap temperature-dependence relations may be used to indirectly compute the operating temperature of each subcell. A sub-cells' intrinsic bandgap temperature-dependence coefficients can be measured by performing quantum efficiency measurements and/or by recording the electro-luminescence and/or photo-luminescence emission profile of a solar cell at multiple temperatures.

Abstract: Provided are methods and devices for transfer printing of semiconductor elements to a receiving surface. In an aspect, the printing is by conformal contact between an elastomeric stamp inked with the semiconductor elements and a receiving surface, and during stamp removal, a shear offset is applied between the stamp and the receiving surface. The shear-offset printing process achieves high printing transfer yields with good placement accuracy. Process parameter selection during transfer printing, including time varying stamp-backing pressure application and vertical displacement, yields substantially constant delamination rates with attendant transfer printing improvement.

Abstract: Provided are an optimized tool apparatus and methods for dry transfer printing of semiconductor elements with high yield and good placement accuracy. The tool apparatus comprises a vacuum coupled fast peel apparatus that provides high pickup yield of the semiconductor elements. In an aspect, this vacuum coupled apparatus provides high pickup rates during pickup of the semiconductor elements from a donor/source wafer. Provided is a tool apparatus for dry transfer printing with a reinforced composite stamp having a thin glass-backing. The tool apparatus also comprises a pressure regulated micro-chamber which provides precise control of a composite stamp lamination and de-lamination. In an aspect, the micro-chamber has an internal cavity volume that is variably controlled, thereby providing precise control of the force on the stamp, and corresponding separation velocity, and improved semiconductor element pick-up and/or placement.

Abstract: An electroluminescent device having a plurality of current driven pixels arranged in rows and columns, such that when current is provided to a pixel it produces light, including each pixel having first and second electrodes and current responsive electroluminescent media disposed between the first and second electrodes; at least one chiplet having a thickness less than 20 micrometers; including transistor drive circuitry for controlling the operation of at least four pixels, the chiplet being mounted on a substrate and having connection pads; a planarization layer disposed over at least a portion of the chiplet; a first conductive layer over the planarization layer and connected to at least one of the connection pads; and a structure for providing electrical signals through the first conductive layer and at least one of the connection pads of the chiplet so that the transistor drive circuitry of the chiplet controls current to the four pixels.

Abstract: Provided are reinforced composite stamps, devices and methods of making the reinforced composite stamps disclosed herein. Reinforced composite stamps of certain aspects of the present invention have a composition and architecture optimized for use in printing systems for dry transfer printing of semiconductor structures, and impart excellent control over relative spatial placement accuracy of the semiconductor structures being transferred. In some embodiments, for example, reinforced composite stamps of the present invention allow for precise and repeatable vertical motion of the patterned surface of the printing apparatus with self-leveling of the stamp to the surface of a contacted substrate. Reinforced composite stamps of certain aspect of the present invention achieve a uniform distribution of contact forces between the printing apparatus patterned surface and the top surface of a substrate being contacted by the reinforced composite stamp of the printing apparatus.