Abstract: To provide a sliding member which has joined strength that is suitable for the circumstance, to which heavy load is applied, and which is excellent in abrasion resistance property. The sliding member 1 contains a supporting layer 2 composed of ferrous metallic material, and a sliding layer 3 composed of copper metallic material, which is formed on a surface 2a of the supporting layer 2. The surface 2a of the supporting layer 2 and the sliding layer 3 are configured to be not a plane and a sliding surface 3a formed on a surface of the sliding layer 3 is configured to be not a plane. The sliding layer is formed on the roughed surface 2a of the supporting layer 2 by thermal spaying.

Abstract: In a gas-blowing-hole array structure, which enables gas to be blown to the whole surface of the conveyed member such as a printed circuit board, a semiconductor wafer or the like almost concentrically and allows the whole surface of conveyed member to be very uniformly heated or cooled, a nozzle pattern P2 of blowing nozzles 2 is arranged to be line symmetry with a nozzle pattern P1 of the blowing nozzles 2 in upper and lower divided sections of one side of the nozzle cover 3 relative to a center portion thereof that is orthogonal to a conveying direction, as shown in FIG. 1. In order for the arrangement patterns diagonally arranged in the nozzle cover 3 to become identical, the nozzle pattern P1 is arranged to be line symmetry with the nozzle pattern P2 of the blowing nozzles 2 in upper and lower divided sections of the other side of the nozzle cover 3.

Abstract: To provide Cu ball that has an excellent alignment performance. In order to control wettability failure of the Cu ball at a moment of soldering, lightness is regulated as an index of determining oxide film thickness on a surface of the ball and the lightness is set to be 55 or more. Further, since it is preferable that the Cu ball has a higher sphericity to measure the lightness accurately, the purity of the Cu ball is set to be 99.995% or less to order to make the sphericity higher. When the lightness is 55 or more, it is preferable that the thickness of oxide film formed on the surface of the Cu ball is 8 nm or less.

Abstract: Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.

Abstract: Providing a core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is equal to or higher than 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.

Abstract: A Cu core ball suppresses a soft error and its alpha dose is low. Its surface roughness does not affect a mounting process. A pure degree of the Cu ball as an internal ball is equal to or larger than 99.9% and equal to or less than 95%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is equal to or higher than 0.95. A solder plating film coated on the Cu ball is a Sn solder plating film or a solder plating film comprising a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is equal to or less than 5 ppb and that of Th is equal to or less than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is equal to or less than 0.0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 ?m.

Abstract: The semiconductor wafer conveying tool which can realize the uniform heating to a surface of a semiconductor wafer when heating the semiconductor wafer is a semiconductor wafer conveying tool which holds the semiconductor wafer having a predetermined diameter to convey it wherein the tool is provided with a main body having an opening with a diameter which is larger than a diameter of the semiconductor wafer, and at least three supporting members each having a predetermined length, containing plural pins which are arranged corresponding to the diameter of the semiconductor wafer and being configured to be a holding mechanism for holding the semiconductor wafer concentrically at a projection position from an inner periphery portion of the main body around the opening, as shown in FIG. 1.

Abstract: To provide a flux that can suppress occurrence of migration surely in a soldered portion on which flux residue is formed. In the flux that forms solder paste by mixing the flux with solder powders, the flux contains phosphonate ester with an amount thereof such that a hydrophobic film is formed. The phosphonate ester is adsorbed to a surface of a soldered portion during soldering. The addition amount of phosphonate ester is preferably not less than 1 mass % through less than 30 mass %. It is preferable that the phosphonate ester is diethyl benzylphosphonate, diethyl allylphosphonate, diethyl (p-methylbenzyl)phosphonate or (2-ethylhexyl)-2-ethylhexyl phosphonate.

Abstract: A positioning jig has a circular part with a diameter that is identical with a diameter of a semiconductor wafer and knock-pins for connecting a periphery of base plate around an opening in a base plate of a conveying tool for a semiconductor wafer. These knock-pins are respectively provided in four blades protruded from predetermined positions of the circular portion at least three directions. When adjusting the projection positions of supporting plates, the knock-pins are fitted into the opening of the base plate of the conveying tool for the semiconductor wafer. The supporting plates moves so that the knock-pins come into contact with an outer edge of the circular part of the prepared positioning jig. The adjusted supporting plates are then fixed on the base plate. The semiconductor wafer is mounted on the adjusted and fixed supporting plates so that the semiconductor wafer is positioned.